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On the Nature of the Native Defect ESR in Thin Diamond Films

Published online by Cambridge University Press:  21 February 2011

J. Shinar ,
H. Jia ,
D. P. Lang  and
M. Pruski
J. Shinar
Affiliation:
Arnes Laboratory - USDOE, Iowa State University, Ames, Iowa 50011 Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
H. Jia
Affiliation:
Arnes Laboratory - USDOE, Iowa State University, Ames, Iowa 50011 Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011
D. P. Lang
Affiliation:
Arnes Laboratory - USDOE, Iowa State University, Ames, Iowa 50011 Department of Chemistry, Iowa State University, Ames, IA 50011
M. Pruski
Affiliation:
Arnes Laboratory - USDOE, Iowa State University, Ames, Iowa 50011 Department of Chemistry, Iowa State University, Ames, IA 50011
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Abstract

The X-band ESR of thin diamond films deposited from 99.5% H2/0.5% CH4 is compared to that of films similarly prepared from D2CD4 and H2/13CH4. The main line and the satellites at ±7.2 G are unaffected by annealing at T <. 1100°C, but their intensity is reduced upon annealing at T ∼ 1200°C. As the satellites are absent from the deuterated films, they are attributed to newly identified dangling bond-H centers, either on internal microvoid surfaces or embedded in the tetrahedral network. This is consistent with the 13C spin-lattice relaxation rate, which indicates that the distribution of paramagnetic centers is homogeneous to within ∼0.04 μm. However, they may be nonuniformly distributed on a finer scale, consistent with the concentrations in m ulti vacancies or stacking faults recently suggested by Fanciulli and Moustakas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 669
Copyright
Copyright © Materials Research Society 1994

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References

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