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On the Relation of Mechanical Deformation and Electrical Properties of BN Nanotubes

Published online by Cambridge University Press:  31 January 2011

Hessam Ghassemi ,
Chee Huei Lee ,
Yoke Khin Yap  and
Reza Shahbazian Yassar
Hessam Ghassemi
Affiliation:
smirshah@mtu.edu, michigan technological university, houghton, Michigan, United States
Chee Huei Lee
Affiliation:
chlee@mtu.edu, Michigan Technological University, Physics, Houghton, Michigan, United States
Yoke Khin Yap
Affiliation:
yoke.yap@scholarone.com, Michigan Technological University, Physics, Houghton, Michigan, United States
Reza Shahbazian Yassar
Affiliation:
reza@mtu.edu, michigan technological university, houghton, Michigan, United States
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Abstract

Using a novel in-situ scanning tunneling microcopy integrated into a 200Kv transmission electron microscopy, we have shown that boron nitride nanotubes (BNNTs) posses remarkable flexibility and convert from insulator to semi-conductor upon bending. To measure the electrical properties, the BNNT was bent between two gold contacts constructing a metal-semiconductor-metal circuit. The resistivity of the BNNT under bending condition was measured to be ∼460 MΩ from the experimentally recorded current-voltage data. Our finding suggests that mechanical straining can improve the electrical transport in BN nanotubes via reducing the band gap.

Keywords

nanostructuretransmission electron microscopy (TEM)electrical properties

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1204: Symposium K – Nanotubes and Related Nanostructures-2009 , 2009 , 1204-K17-03
Copyright
Copyright © Materials Research Society 2010

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