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On the Role of Inversion Layer, Electronic Density of States and Interfacial Layer on the Barrier Height Formation of Amorphous-Silicon Schottky Diodes

Published online by Cambridge University Press:  26 February 2011

C. Manfredotti  and
K. K. Sharma
C. Manfredotti
Affiliation:
Experimental Physics Department, University of Torino, Via Pietro Giuria, 1 10125 Torino, Italy Gruppo Nazionale Di Struttura Della Materia Del CNR (Italy)
K. K. Sharma
Affiliation:
Experimental Physics Department, University of Torino, Via Pietro Giuria, 1 10125 Torino, Italy Gruppo Nazionale Di Struttura Della Materia Del CNR (Italy)
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Abstract

Large variations in barrier height of a-Si:H Schottky diodes can be achieved by introducing thin inversion layer at the interface. Electronic density of states in the basic film depends upon the growth and surface preparation conditions.However, the high density of surface states of the order of 1013 cm-2eV -1usually found at a-Si:H film masks the role of bulk density of states which are ∼1016 cm-3 eV -1. As the density of surface states increases, the barrier height increases. At very large density (∼ 5 × 1014 cm-2 eV-1), Fermi level of the film pins to the neutral level and the barrier height becomes independent of the metal work function. Poisson's equation has been employed to illustrate the role of various charges contributed by the basic semiconductor, the inversion layer and the eletronic states. The concept of interfacial layer of 2 to 3 atomic dimensions with the permittivity of free space is essential to understand the mechanism of barrier height formation in a-Si:H Schottky diodes like similar devices in other semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 463
Copyright
Copyright © Materials Research Society 1988

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