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On the Structure of Metal Silicide:Silicon Interfaces.

Published online by Cambridge University Press:  22 February 2011

D. Cherns  and
R.C. Pond
D. Cherns
Affiliation:
H.H. Wills Physics Laboratory, University Of Bristol, Bristol BS8 lTL., England.
R.C. Pond
Affiliation:
Department of Metallurgy and Materials Science, The University, Liverpool L69 3BX, England.
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Abstract

A new crystallographic theory of interfacial structure is applied to the case of interfaces between NiSi2, CoSi2 and Pd2Si grown epitaxially on Si. In the case of NiSi2 layers grown in parallel orientation it is shown that dislocations with Burgers vectors ¼<111> separate energetically degenerate interfacial domains on {hko} interfaces. Observations, of such defects on (001) interfaces, using transmission electron microscopy, are presented and show detailed agreement with the theory.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 423
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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