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One-Dimensional Ordering of Self-assembled Ge Dots on Photolithographically Patterned Structures on Si (001)

Published online by Cambridge University Press:  01 February 2011

B. Yang ,
A.R. Woll ,
P. Rugheimer  and
M.G. Lagally
B. Yang
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706binyang@chem.wisc.edu
A.R. Woll
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706binyang@chem.wisc.edu
P. Rugheimer
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706binyang@chem.wisc.edu
M.G. Lagally
Affiliation:
University of Wisconsin-Madison, Madison, WI 53706binyang@chem.wisc.edu
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Abstract

We report spatial arrangement of self-assembled Ge quantum dots on patterned structures on Si (001) without using complicated lithography. Starting from stripes and mesas fabricated by conventional lithography and plasma etching, we prepare sinusoidal Si stripes with narrow ridges and mesas with humped edges via high-temperature annealing. Deposited Ge self-assembles into coherent nanocrystals that align along the narrow ridges of the stripes and the sloped mesa edges. Enhanced strain relief at the ridges due to elastic relaxation and the high step densities on the shallow slopes at the edges are likely causes of nanocrystal alignment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A8.5
Copyright
Copyright © Materials Research Society 2002

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