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Optical And Electrical Properties Of Doped Polysilanes

Published online by Cambridge University Press:  16 February 2011

M. Kakimoto ,
H. Ueno ,
H. Kojima ,
Y. Yamaguchi  and
A. Nishimura
M. Kakimoto
Affiliation:
Osaka R&D Laboratories, Sumitomo Electric Industries, Ltd., 1–1–3 Shimaya, Konohana-ku, Osaka 554, JAPAN
H. Ueno
Affiliation:
Osaka R&D Laboratories, Sumitomo Electric Industries, Ltd., 1–1–3 Shimaya, Konohana-ku, Osaka 554, JAPAN
H. Kojima
Affiliation:
Osaka R&D Laboratories, Sumitomo Electric Industries, Ltd., 1–1–3 Shimaya, Konohana-ku, Osaka 554, JAPAN
Y. Yamaguchi
Affiliation:
Osaka R&D Laboratories, Sumitomo Electric Industries, Ltd., 1–1–3 Shimaya, Konohana-ku, Osaka 554, JAPAN
A. Nishimura
Affiliation:
Osaka R&D Laboratories, Sumitomo Electric Industries, Ltd., 1–1–3 Shimaya, Konohana-ku, Osaka 554, JAPAN
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Abstract

The doping effects on optical and electrical properties of polysilanes have been investigated by in-situ Measurement. An optical absorption associated with σ–σ* transition was observed near 330 nm for polymethylphenylsilane. By iodine doping, a new absorption was observed at the longer wavelength around 420 nm, which should originate from the charge transfer between dopant and Σ-conjugated system. Similar spectral changes have also been observed for most of investigated linear polysilanes.

Furthermore, we have found drastic spectral change upon iodine doping into polysilane with p-N,N-dimethyIaminophenyI substituent. It has very strong absorption up to 700 nm. It Might originate from a strong interaction between the substituent and iodine. At the same time, Σ-conjugation Might also play a significant role on doping into this system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 328: Symposium Q – Electrical, Optical, and Magnetic Properties of Organic Solid State Materials , 1993 , 267
Copyright
Copyright © Materials Research Society 1994

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References

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