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Optical and electrical properties of tin oxide-based thin films prepared by streaming process for electrodeless electrochemical deposition

Published online by Cambridge University Press:  09 June 2015

Farnood Khalilzadeh-Rezaie ,
Isaiah O. Oladeji ,
Gbadebo. T. Yusuf ,
Janardan Nath ,
Nima Nader ,
Shiva Vangala ,
Justin W. Cleary ,
Winston V. Schoenfeld  and
Robert E. Peale
Farnood Khalilzadeh-Rezaie
Affiliation:
Department of Physics, University of Central Florida, Orlando, FL 32816, U.S.A.
Isaiah O. Oladeji
Affiliation:
SISOM Thin Films LLC,Orlando, FL 32805, U.S.A.
Gbadebo. T. Yusuf
Affiliation:
Department of Basic Sciences, Osun State Polytechnic, Iree, Nigeria
Janardan Nath
Affiliation:
Department of Physics, University of Central Florida, Orlando, FL 32816, U.S.A.
Nima Nader
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, U.S.A. Solid State Scientific Corporation, Hollis, NH 03060, U.S.A.
Shiva Vangala
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, U.S.A. Solid State Scientific Corporation, Hollis, NH 03060, U.S.A.
Justin W. Cleary
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, U.S.A.
Winston V. Schoenfeld
Affiliation:
College of Optics and Photonics, University of Central Florida, Orlando, FL 32816, U.S.A.
Robert E. Peale
Affiliation:
Department of Physics, University of Central Florida, Orlando, FL 32816, U.S.A.
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Abstract

Transparent conducting thin-films of SnO2: F were grown on preheated glass, Al2O3 coated glass, and quartz substrates by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4F) dissolved in a mixture of deionized water and organic solvents were used as precursors. The preheated substrate temperature was varied between 440 and 500 °C. High quality SnO2:F films were grown at all the substrate temperatures studied. The resulting typical film thickness was 250 nm. X-ray diffraction shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength range 400 to 1000 nm. The lowest electrical resistivity achieved was 6 × 10-4 Ω-cm. The Hall measurements showed that the film is an n-type semiconductor, with carrier mobility of 8.3 cm2/V-s, and carrier concentration of 1 × 1021 cm-3. The direct bandgap was determined to be 4.0 eV from the transmittance spectrum.

Keywords

transparent conductorSnoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2136423
Copyright
Copyright © Materials Research Society 2015 

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