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Optical bias controlled amplification in tandem Si-C pinpin devices

Published online by Cambridge University Press:  20 June 2011

M. Vieira ,
M. A Vieira ,
P. Louro ,
M. Fernandes ,
A. Fantoni  and
M. Barata
M. Vieira
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014 Lisboa, Portugal Tel: +351 21 8317290, Fax: +351 21 8317114, mv@isel.ipl.pt. CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal. DEE-FCT-UNL, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal.
M. A Vieira
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014 Lisboa, Portugal Tel: +351 21 8317290, Fax: +351 21 8317114, mv@isel.ipl.pt. CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal.
P. Louro
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014 Lisboa, Portugal Tel: +351 21 8317290, Fax: +351 21 8317114, mv@isel.ipl.pt. CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal.
M. Fernandes
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014 Lisboa, Portugal Tel: +351 21 8317290, Fax: +351 21 8317114, mv@isel.ipl.pt. CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal.
A. Fantoni
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014 Lisboa, Portugal Tel: +351 21 8317290, Fax: +351 21 8317114, mv@isel.ipl.pt. CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal.
M. Barata
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014 Lisboa, Portugal Tel: +351 21 8317290, Fax: +351 21 8317114, mv@isel.ipl.pt. CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica, Portugal.
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Abstract

A monolithic double pi’n/pin a-SiC:H device that combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal is analyzed under different electrical and optical bias conditions at low and high excitation frequencies. Results show that the transducer is a bias wavelength current-controlled device that make use of changes in the wavelength of the background to control the power delivered to the load. Self optical bias amplification or quenching under uniform irradiation and transient conditions is achieved. The device acts as an optical amplifier whose gain depends on the background wavelength and frequency. An optoelectronic model supported by an electrical simulation explains the operation of the optical system.

Keywords

optoelectronicsensoramorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a13-05
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Connelly, M. J., Semiconductor Optical Amplifiers. Boston, MA: Springer-Verlag, 2002. ISBN 978-0-7923-7657-6.Google Scholar
2. Vieira, M., Fernandes, M., Louro, P., Fantoni, A., Vieira, M. A., Costa, J., Barata, M., Mat. Res. Soc. Symp. Proc. Volume 1245, A08–02 (2010) .Google Scholar
3. Vieira, M., Fantoni, A., Louro, P., Fernandes, M., Schwarz, R., Lavareda, G., and Carvalho, C. N., Vacuum, Vol. 82, Issue 12, 8 August 2008, pp: 1512–1516.10.1016/j.vacuum.2008.03.056Google Scholar
4. Vieira, M. A., Vieira, M., Costa, J., Louro, P., Fernandes, M., Fantoni, A., in Sensors & Transducers Journal Vol. 9, Special Issue, December 2010, pp.96–120.Google Scholar