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Optical Characterization of Chemically Vapor Deposited and Laser-Annealed Polysilicon

Published online by Cambridge University Press:  15 February 2011

B. G. Bagley ,
D. E. Aspnes ,
G. K. Celler  and
A. C. Adams
B. G. Bagley
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
D. E. Aspnes
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
A. C. Adams
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
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Abstract

The optical properties of polysilicon on insulating SiO2 were measured by spectroscopic ellipsometry over the energy range 3.0 to 6.0 eV. Spectra were obtained for films as-deposited and after irradiation with an Ar ion laser (focused to a 50μm spot diameter) at 6.0, 7.0 or 7.5 watts. We observed monotonic changes in both ε1 and ε2 with increasing incident power even though the power density was high enough to completely melt the silicon surface in all cases. The changes observed are caused by changes in microstructure; with increasing power the amorphous component decreases and the density increases. Approximate values of the microstructural components are estimated by comparing measured spectra to those synthesized from constituent spectra in the Bruggeman effective medium approximation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 483
Copyright
Copyright © Materials Research Society 1982

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References

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