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Optical Gain in Bgan Lattice-Matched to (0001) 6H-SiC

Published online by Cambridge University Press:  10 February 2011

T. Honda ,
M. Tsubamoto ,
Y. Kuga  and
H. Kawanishi
T. Honda
Affiliation:
Dept. of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192, Japan, ctl 1761 @ns.kogakuin.ac.jp
M. Tsubamoto
Affiliation:
Dept. of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192, Japan, ctl 1761 @ns.kogakuin.ac.jp
Y. Kuga
Affiliation:
Dept. of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192, Japan, ctl 1761 @ns.kogakuin.ac.jp
H. Kawanishi
Affiliation:
Dept. of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192, Japan, ctl 1761 @ns.kogakuin.ac.jp
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Abstract

The optical gain of a BGaN ternary system lattice-matched to 6H-SiC was estimated. The parameters used in this estimation, such as effective mass and a bandgap energy, were estimated according to Harrison's theory. The optical gain was estimated using the density matrix theory with intraband relaxation broadening. The transparency carrier density of BGaN is slightly only smaller than that of GaN. It may be possible to fabricate a BGaN-based semiconductor laser operating in the UV spectral region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1125
Copyright
Copyright © Materials Research Society 1998

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