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Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE

Published online by Cambridge University Press:  21 February 2011

F. Semendy ,
N. Bambha ,
J.G. Kim ,
H. Liu  and
R.M. Park
F. Semendy
Affiliation:
Army Research Laboratory, Fort Belvoir, VA 22060, fsemendy@nvl.army.mil
N. Bambha
Affiliation:
Army Research Laboratory, Fort Belvoir, VA 22060, fsemendy@nvl.army.mil
J.G. Kim
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
H. Liu
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
R.M. Park
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
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Abstract

Both wurtzite-and zincblende-GaN films have been grown on sapphire and MgO substrates, respectively, and examined by photoluminescence and x-ray analysis. GaN films were grown on suitably prepared Al2O3 and MgO substrates by molecular beam epitaxy employing a rf plasma discharge, nitrogen free radical source. The wurtzite-and zincblende-GaN films exhibited dominant near band-edge emission, the nature of which will be compared and contrasted for both phases in this paper. X-ray diffraction data for both phases will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 547
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Petalas, J., Logothetidis, S., Boultadakis, S., Alouani, M., and Wills, J.M., Phys.Rev, B 52, 8082 (1995)Google Scholar
2 Dingle, B., Sell, D.D., Stokowski, S.E., and Ilegems, M., Phys. Rev, B 4, 1211 (1971)Google Scholar
3 Okumura, H., Yoshida, Y., and Okahisa, T., Appl. Phys. Lett. 64, 2997 (1994)Google Scholar
4 Powell, R.C., Lee, N.E., Kim, Y.W., and Greene, J.E., J. Appl. Phys. 73, 189 (1993)Google Scholar
5 Sitar, Z., Paisley, M.J., Ruan, J., Choyke, J.W., and Davis, R. F., J. Mater. Sci. Lett., 11, 261 (1992)Google Scholar
6 -Flores, G.R, Navarro-Contreras, H., Lastras-Martinez, A., Powell, R.C., and Greene, J.E., Phys. Rev B 50, 8433 (1994)Google Scholar
7 Powell, R.C., Tomasch, G.A. Kim, Y.W., Thornton, J.A., and Greene, J.E., MRS Symposia Proceeedings No. 162, 525, (1990)Google Scholar
8 Strite, S., Ruan, J. Li, Z., Salvador, A., Chen, H., Smith, D.J., Choyke, W.J., and Morkoc, H., J. Vac. Sci. Technol. B 9, 1924 (1991)Google Scholar
9 Liu, H., Frenkel, A.C., Kim, J. G., and Park, R. M., J. Appl. Phys. 74, 6124 (1993)Google Scholar
10 Min, B.J., Chan, C.T., and Ho, K.M., Phys. Rev. B 45, 1159 (1992)Google Scholar