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Optimization of Graded CIGS Solar Cells Using TCAD Simulations

Published online by Cambridge University Press:  13 June 2012

Mankoo Lee ,
Dipankar Pramanik ,
Haifan Liang ,
Ed Korczynski  and
Jeroen van Duren
Mankoo Lee
Affiliation:
Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 United States
Dipankar Pramanik
Affiliation:
Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 United States
Haifan Liang
Affiliation:
Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 United States
Ed Korczynski
Affiliation:
Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 United States
Jeroen van Duren
Affiliation:
Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 United States
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Abstract

To understand paths towards higher efficiency (η) for copper-indium-gallium-(sulfur)-selenide [CIG(S)Se] solar cells, we investigated a variety of absorber composition grading schemes for various back-side gallium (Ga), front-side sulfur (S), and double-graded Ga composition depth profiles in TCAD 1D/2D simulations. We fitted experimental results of a Back-Side Graded (BSG) solar cell with our TCAD models, prior to investigating other grading and interface schemes. The BSG solar cell was fabricated on a High Productivity Combinatorial (HPC™) platform based on sputtering Cu(In,Ga) followed by selenization. Our TCAD simulation methodology for optimizing CIG(S)Se solar cells started with a sensitivity analysis using 1D Solar-cell CAPacitance Simulator (SCAPS) [1] by selecting a typical range of key model parameters and analyzing the impact on η. We then used a 2D commercially-available Sentaurus simulation tool [2] to incorporate wavelength-dependent optical characteristics. As a result, we provide insight in the impact of grading schemes on efficiency for a fixed ‘material quality’ equal to an in-house BSG solar cell. We also quantify the effects of interface layers like MoSe2 at the Mo/CIG(S)Se interface, and an inverted surface layer at the CIG(S)Se/CdS interface.

Keywords

barrier layerfilmphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1447: Symposium V – Nanostructured and Advanced Materials for Solar-Cell Manufacturing , 2012 , mrss12-1447-v03-21
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Burgelman, M. and Marlein, J., 23rd European Photovoltaic S.E. Conf., 2008, pp. 2151–5.Google Scholar
2. Synopsys, Inc., Sentaurus Device User Guide, Version F-2011.09, 2011.Google Scholar
3. Jackson, P., et al. ., Prog. Photovoltaic: Res. Appl. 19, 2011, pp. 894–897.Google Scholar
4. Contreras, M. A., Mansfield, L. M., et al. ., IEEE Proc. of the 37th PVSC, 2011.Google Scholar
5. Decock, K., Lauwaert, J. and Burgelman, M., Proc. of the 45th Int. Conf. on MIDEM, 2009.Google Scholar
6. Song, J., Li, S. S., Huang, C. H., et al. ., Solid-State Electronics 48, 2004, pp. 73–9Google Scholar
7. Lundberg, O., Edoff, M., and Stolt, L., Thin Solid Films 480–481, 2005, pp. 520–5.Google Scholar
8. Lee, J. W, van Duren, J., et al. ., Mater. Res. Soc. Symp. Proc. vol. 1165, 2009.Google Scholar
9. Morales-Aceveldo, A., et al. ., Materials Science & Engineering B, 2012, in press .Google Scholar