Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-30T00:01:36.983Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimization of Jc for Photo-Assisted MOCVD Prepared YBCO Thin Films by Robust Design

Published online by Cambridge University Press:  15 February 2011

P. C. Chou ,
Q. Zhong ,
Q. L. Li ,
A. Ignatiev ,
C. Y. Wang ,
E. E. Deal  and
J. G. Chen
P. C. Chou
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204-5507
Q. Zhong
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204-5507
Q. L. Li
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204-5507
A. Ignatiev
Affiliation:
Texas Center for Superconductivity and Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204-5507
C. Y. Wang
Affiliation:
Department of Industrial Engineering, University of Houston, Houston, Texas 77204-4812
E. E. Deal
Affiliation:
Department of Industrial Engineering, University of Houston, Houston, Texas 77204-4812
J. G. Chen
Affiliation:
Department of Industrial Engineering, University of Houston, Houston, Texas 77204-4812
Get access

Abstract

Metalorganic chemical vapor deposition (MOCVD) is emerging as a practical high Tc superconducting thin film preparation technique for industrial application. Intrinsically this technique involves a large number of variable parameters. This is especially critical for the quarternary or higher high Tc materials. Thus, effective methods are required to optimize the parameters for the preparation of high Tc films. A matrix experimental design named Robust Design has been employed for this purpose. The first-phase design was based on a starting knowledge of growth temperature and pressure, and annealing temperature for MOCVD preparation of YBCO thin films. A minimum lab effort of only nine deposition experiments was then used to optimize the process control parameters of precursor oven temperature, carrier gas (Ar) flow rate, O2 flow rate and N2O flow rate. The results were then followed by three confirmation depositions. The Robust Design resulted in the growth of YBCO film with Tc consistently in the range of 87.0 K to 90.2 K and Jc improved from about 1.0 × 106 A/cm2 to 3–5 × 106 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 279
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Leskelä, M., Mölsä, H. and Nünistö, L., Supercond. Sci. Technol. 6, 627(1993).Google Scholar
2. Chrzanowski, J., Burany, X. M., Curzon, A. E., Irwin, J. C., Heinrich, B., Fortier, N., and Cragg, A., Physica C 207, 25(1993),CrossRefGoogle Scholar
3. Muralidhar, G. K., Rao, G. M., Raghunathan, J., and Mohan, S., Physica C 192, 447(1992).CrossRefGoogle Scholar
4. Ravean, B., Michel, C., Hervieu, M., Groult, D., Maignan, A., and Provost, J., J. Superconductivity 5, 203(1992).Google Scholar
5. Weaver, B. D. and Summers, G. P., Appl. Phys. Lett. 61, 1237(1992).Google Scholar
6. Taguchi, G., Introduction to Quality Engineering — Designing Quality into Products and Processes, Asian Productivity Organization, Minato-Ku, Japan(1986).Google Scholar
7. Phadke, M. S., Quality Engineering Using Robust Design, Prentice Hall, Englewood Cliffs, New Jersey(1989).Google Scholar
8. Singh, R., Sinha, S., Hsu, N. J., Chou, P., Singh, P. K., and Narayan, J., J. Appl. Phys. 67, 1561(1990).Google Scholar
9. Singh, R., Sinha, S., Hsu, N. J., Chou, P., J. Appl. Phys. 67, 3464(1990).Google Scholar
10. Singh, R., Radpour, F., and Chou, P., J. Vac. Sci. Technol. A7, 1456(1989).Google Scholar
11. Singh, R., Chou, P., and Radpour, F., J. Appl. Phys. 66, 2381(1989).Google Scholar
12. Chou, P. C., Zhong, Q., Li, Q. L., and Ignatiev, A., In preparation.Google Scholar
13. Chou, P. C., Zhong, Q., Li, Q. L., and Ignatiev, A., To be submitted to J. Appl. Phys.Google Scholar