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Optoelectronic Properties of Amorphous SiGec Alloys

Published online by Cambridge University Press:  21 February 2011

J. Kolodzey ,
R. Schwarz ,
F. Wang ,
T. Muschik ,
J. Krajewski ,
R. Shekhar ,
M. Barteau ,
R. Plättner  and
E. Günzel
J. Kolodzey
Affiliation:
University of Delaware, Newark, DE 19716
R. Schwarz
Affiliation:
Technische Universität München, Physik-Department E16, 8046 Garching, FRG
F. Wang
Affiliation:
Technische Universität München, Physik-Department E16, 8046 Garching, FRG
T. Muschik
Affiliation:
Technische Universität München, Physik-Department E16, 8046 Garching, FRG
J. Krajewski
Affiliation:
University of Delaware, Newark, DE 19716
R. Shekhar
Affiliation:
University of Delaware, Newark, DE 19716
M. Barteau
Affiliation:
University of Delaware, Newark, DE 19716
R. Plättner
Affiliation:
Siemens AG, Corp. Res. Tech. D-8000 München, FRG
E. Günzel
Affiliation:
Siemens AG, Corp. Res. Tech. D-8000 München, FRG
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Abstract

We describe the optoelectronic characteristics of hydrogenated amorphous silicon germanium carbon (a.Si1-x-yGexCy:H) alloys prepared by plasma deposition from SiH4/GeH4/CH4/H2 gas mixtures. a-Si1-x-yGexCy:H is a homogeneous random alloy having a variable optical gap depending on composition, with properties similar to those of amorphous Si-Ge alloys of the same optical gap but with improved thermal stability. Calculations show that if the ratio of Ge/C atomic fractions is 8.2, the average bond length matches that of unalloyed amorphous a-Si:H with the possibility of reduced defect densities at heterointerfaces. After light-soaking with high intensity white light, a sample having a 1.3 eV optical gap exhibited no Staebler-Wronski change in its properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 637
Copyright
Copyright © Materials Research Society 1992

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References

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