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Optoelectronic Properties of a-SiC:H Studied by Time-Resolved Microwave Photoconductivity and Photoinduced Absorption Measurements

Published online by Cambridge University Press:  21 February 2011

C. Swiatkowski ,
D. Herm ,
W. Hirsch  and
M. Kunst
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institut, dept SI: Solare Energetik, Glienicker StraΒe 100, 1000 Berlin 39, Germany
D. Herm
Affiliation:
Hahn-Meitner-Institut, dept SI: Solare Energetik, Glienicker StraΒe 100, 1000 Berlin 39, Germany
W. Hirsch
Affiliation:
Hahn-Meitner-Institut, dept SI: Solare Energetik, Glienicker StraΒe 100, 1000 Berlin 39, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, dept SI: Solare Energetik, Glienicker StraΒe 100, 1000 Berlin 39, Germany
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Abstract

The optoelectronic properties of a-SiC:H alloys with different carbon content are investigated with time resolved photoconductivity and photoinduced absorption measurements. It is shown that the electron drift mobility decreases with increasing carbon content. Also a weak increase of deep electron trapping with increasing carbon content is suggested by the experimental data. The recombination does not seem to be strongly changed by the presence of carbon at least at low carbon content.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 625
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Kunst, M. and Werner, A., J. Appl. Phys. 58, 2236 (1985).Google Scholar
[2] Taue, J., in Semiconductors and Semimetals, Vol. 21b, ed. by Pankove, J. I., (Academic Press, Orlando, 1984), p. 299.Google Scholar
[3] Kunst, M., Neitzert, H.-C. and Ruebel, H., Phys. Rev. B 44, 1081 (1991).Google Scholar
[4] Grunow, P., Herm, D., Könenkamp, R., Küppers, U., Neitzert, H.-C. and Werner, A., in Amorphous Silicon Technology, ed. by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y. and LeComber, P.G. (Mater. Res. Soc. Proc. 142, Pittsburgh, PA, 1989), p. 363.Google Scholar
[5] Kunst, M. and Neitzert, H.-C., J. Appl. Phys. 69, 8320 (1991).Google Scholar