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Orders of Magnitude Reduction in Threading Dislocations in ZnO Grown on Facet-Controlled GaN

Published online by Cambridge University Press:  01 February 2011

Soo Jin Chua ,
Hai Long Zhou ,
Hui PAN  and
Thomas Osipowicz
Soo Jin Chua
Affiliation:
elecsj@nus.edu.sg, Singapore-MIT Alliance, NUS, E4-04-10, 4 Engineering Drive 3,, Singapore 117576, Singapore, 117576, Singapore, (65) 65164784, (65) 6779 7454
Hai Long Zhou
Affiliation:
g0301203@nus.edu.sg, National University of Singapore, Department of Physics, 2 Science Drive 3,, Singapore, Singapore, 117542, Singapore
Hui PAN
Affiliation:
g0202361@nus.edu.sg, National University of Singapore, Department of Physics, 2 Science Drive 3,, Singapore, Singapore, 117542, Singapore
Thomas Osipowicz
Affiliation:
phyto@nus.edu.sg, National University of Singapore, Department of Physics, 2 Science Drive 3,, Singapore, Singapore, 117542, Singapore
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Abstract

ZnO is grown by chemical vapour deposition on {1 1 -2 2} GaN planes formed by epitaxial layer overgrowth. Window stripes in a SiO2 mask are oriented in the <1 -1 0 0> direction of the GaN film. Triangular GaN ridge are formed during ELO growth by metal organic chemical vapour deposition. A flat (0 0 0 1) ZnO plane is grown on each triangular cross-section ridge and it is found that the ZnO film has dislocation density reduced by two orders of magnitude compared to that of the GaN substrate.

Keywords

chemical vapor deposition (CVD) (deposition)dislocationsepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K05-04
Copyright
Copyright © Materials Research Society 2007

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