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The Organometallic Epitaxy of Hgcdte for Infrared Detector Applications

Published online by Cambridge University Press:  26 February 2011

S.K. Ghandhi
S.K. Ghandhi*
Affiliation:
Electrical, Computer, and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

This paper reviews the requirements for mercury cadmium telluride material which is suitable for far infrared detectors. This is followed by substrate and reactor considerations, leading to its direct alloy growth by organometallic vapor phase epitaxy.

It is shown that HgCdTe can now be grown with electrical properties and areal compositional uniformity that are suitable for focal plane arrays, operating in the 10.6 Am range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 65
Copyright
Copyright © Materials Research Society 1988

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References

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