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Orientation Control of HTS Thin Films

Published online by Cambridge University Press:  18 March 2011

K. Endo ,
H. Ishikawa ,
T. Yoshizawa ,
K. Abe ,
J. Itoh  and
K. Kajimura
K. Endo
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tukuba 305-8568, Japan
H. Ishikawa
Affiliation:
Tokyo Denki Univ.
T. Yoshizawa
Affiliation:
Tokyo Denki Univ.
K. Abe
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tukuba 305-8568, Japan
J. Itoh
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tukuba 305-8568, Japan
K. Kajimura
Affiliation:
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tukuba 305-8568, Japan
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Abstract

The preparation of non c-axis oriented HTS films with longer coherence length is one of key technologies toward realisation of viable Josephson devices. We reports on the successful growth of (119)Bi-2223 films by MOCVD using a two-step growth temperature procedure and on AFM observation of the film surface. This temperature procedure was found to be effective for orientation control and phase control in comparison with a fixed growth temperature procedure. As a result, superconducting properties were much improved. The surface morphology observed by AFM showed a mountain-range-shaped one, which strongly reflects the epitaxial relationship between the (119)Bi-2223 film and (110) SrTiO3 substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 689: Symposium E – Materials for High-Temperature Superconductor Technologies , 2001 , E5.20
Copyright
Copyright © Materials Research Society 2002

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References

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