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Origin of Grain Boundary Recombination Activity in Silicon Wafers

Published online by Cambridge University Press:  21 February 2011

H. Amanrich ,
S. Martinuzzi  and
M. Pasquinelli
H. Amanrich
Affiliation:
Laboratoire de Photoélectricité des Semiconducteurs, Faculté des Sciences et Techniques de Saint-Jérôme, F. 13397 Marseille Cedex 13
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité des Semiconducteurs, Faculté des Sciences et Techniques de Saint-Jérôme, F. 13397 Marseille Cedex 13
M. Pasquinelli
Affiliation:
Laboratoire de Photoélectricité des Semiconducteurs, Faculté des Sciences et Techniques de Saint-Jérôme, F. 13397 Marseille Cedex 13
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Abstract

In silicon bicrystals grain boundaries (GBs) become recombining after they have been annealed in argon at temperatures higher than 800°C for tens of hours. In order to verify the eventual influence of metallic elements, interstitials gold atoms are introduced in the bicrystals by diffusion (T ≤ 8000 C) from gold dots deposited far from the GB (gold could be segregated by the GB but cannot give deep levels in the grains). It is found by DLTS, EBIC contrast and LBIC scan map that the recombination strength of GBs is not changed by gold in diffusion in as grown bicrystals, while it is reduced in annealed samples. Similar results are obtained with GBs of polycrystalline wafers.

It is concluded that the activation of GBs in CZ silicon bicrystals is certainly due to the segregation of a slow diffuser like oxygen, and that fast diffusers play a secondary role only.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 179
Copyright
Copyright © Materials Research Society 1990

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