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The Origin of Mis-Oriented Diamond Grains Nucleated Directly on (001) Silicon Surface

Published online by Cambridge University Press:  10 February 2011

R.Q. Zhang ,
W.J. Zhang ,
C. Sun ,
X. Jiang  and
S.-T. Lee
R.Q. Zhang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
W.J. Zhang
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
C. Sun
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
X. Jiang
Affiliation:
Fraunhofer-Institut fuer Schicht- und Oberflaechentechnik (FhG-IST), Bienroder Weg 54 E, D-38108 Braunschweig, Germany
S.-T. Lee
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China
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Abstract

The origin of mis-oriented diamond grains frequently observed in heteroepitaxial diamond films on (001) silicon surfaces was studied. By statistically analyzing the in-plane rotation angles of diamond grains in scanning electron microscopy observations, it was found that the distribution of the grain orientation is not random and two satellite distribution peaks at about 20° and 30° accompany the main distribution peak at zero degree referenced to the <110> direction of substrate. The interface structure corresponding to the main distribution peak at zero degree of oriented diamond growth has been proposed in our previous studies. In this study, our molecular orbital PM3 simulation of a step-by-step diamond nucleation further reveals two other metastable diamond/silicon interfacial structures. The orientations of the corresponding diamond grains are parallel to the (001) silicon surface but with in-plane rotations of 20° and 30° respectively with respect to the <110> direction. We relate these two mis-oriented growths to the two satellite peaks of grain orientation distribution. Based on this study, the possibility in experiment to reduce the formation of mis-oriented configurations and to obtain a perfectly oriented diamond growth is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 529: Symposia BB – Computational & Mathematical Models of Microstructural Evolution , 1998 , 139
Copyright
Copyright © Materials Research Society 1998

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References

1 Jiang, X. and Klages, C.-P., Diamond Relat. Mater. 2, 1112 (1993).Google Scholar
2 Jiang, X., Klages, C.-P., Zachai, R., Hartweg, M. and Füsser, H.-J., Appl. Phys. Lett. 62, 3438 (1993).Google Scholar
3 Jiang, X., Klages, C.-P., Rösler, M., Zachai, R., Hartweg, M. and Fiisser, H.-J., Appl. Phys. A 57, 483 (1993).Google Scholar
4 Wolter, S.D., Stoner, B.R. and Glass, J.T., Ellis, P.J., Buhaenko, D.S., Jenkins, C.E. and Southworth, P., Appl. Phys. Lett. 62, 1215 (1993).Google Scholar
5 Chen, Q.J., Yang, J. and Lin, Z.D., Appl. Phys. Lett. 67, 1853(1995); Q.J. Chen, Y. Chen, J. Yang and Z.D. Lin, Thin Solid Films 274, 160 (1996).Google Scholar
6 Song, S.G., Chen, C.L., Mitchell, T.E., Hackenberger, L.B. and Messier, R., J. Appl. Phys. 79, 1813 (1996).Google Scholar
7 Jubber, M.G. and Milne, D.K., Phys. Stat. Sol. (a) 154, 185 (1996).Google Scholar
8 Schreck, M. and Stritzker, B., Phys. Stat. Sol. (a) 154, 197 (1996).Google Scholar
9 Kaenel, Y. Von, Stiegler, J., Blank, E., Chauvet, O., Hellwig, Ch. and Plamann, K., Phys. Stat. Sol. (a) 154, 219 (1996).Google Scholar
10 Jiang, X. and Jia, C.L., Appl. Phys. Lett. 69, 3902 (1996).Google Scholar
11 Jiang, X. and Jia, C.L., J. Appl. Phys. 83 (5), 2511 (1998).Google Scholar
12 Angus, J.C. and Hayman, C.C., Science 241, 913 (1988).Google Scholar
13 Collins, A.T., Semicond. Sci. Technol. 4, 605 (1989).Google Scholar
14 Yarbrough, W.A. and Messier, R., Science 247, 688 (1990).Google Scholar
15 Jiang, X. and Klages, C.-P., Phys. Status Solidi A 154, 175 (1996).Google Scholar
16 Stewart, J.J.P., J. Comput. Chem. 2, 209 (1989).Google Scholar
17 Dewar, M.J.S. and Thiel, W.J., J. Am. Chem. Soc. 99, 4899 (1977).Google Scholar
18 Besler, B.H., Hase, W.L. and Hass, K.C., J. Phys. Chem. 96, 9369 (1992).Google Scholar
19 Defik, P., Gali, A., Sczigel, G. and Ehrhardt, H., Diamond Rel. Mater. 4, 706 (1995).Google Scholar
20 Colle, R. and Stavrev, K.K., J. Solid State Chem. 117, 427 (1995).Google Scholar
21 Jeong, H.D., Ryu, S., Lee, Y.S. and Kim, S., Surf. Sci. 334, L1226(1995).Google Scholar
22 Zhang, R.Q., Wang, W.L., Esteve, J. and Bertran, E., Thin Solid Film, in press; and their following work.Google Scholar
23 Zhang, R.Q., Wang, W.L., Esteve, J. and Bertran, E., Appl. Phys. Lett. 69, 1086 (1996).Google Scholar
24 Jiang, X., Zhang, R.Q., Yu, G. and Lee, S.T., Phys. Rev. B, submitted.Google Scholar
25 Verwoerd, W.S., Surf. Sci. 304, 24 (1994); and his related work.Google Scholar
26 Sun, C., Zhang, W.J., Lee, C.S., Bello, I., and Lee, S.T., Diamond Rel. Mater., submitted.Google Scholar