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Oxidation Effects During the Formation of Buried Sb Dopant Profiles in Silicon Using Pulsed Laser Epitaxy

Published online by Cambridge University Press:  28 February 2011

Randall J. Carolissen  and
R. Pretorius
Randall J. Carolissen
Affiliation:
Physics Dept., Univ. of the Western Cape, Private Bag X17, BELLVILLE 7535, South Africa
R. Pretorius
Affiliation:
Ion-Solid Interaction Division, Van de Graaff Group, National Accelerator Centre, P.O. Box 72, FAURE 7131, South Africa
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Abstract

Severe oxidation inhibited epitaxy when buried Sb profiles in single crystal silicon were formed from evaporated layers irradiated in atmosphere with a pulsed Q-switched ruby laser. Oxygen concentrations as high as 5×1017atoms/cm2 (equivalent to 105nm SiO2) were measured. However, structures prepared without the Sb layer and irradiated under identical conditions, showed no oxidation. Oxidation of Sb as a source of the measured oxygen was ruled out, while the total heating time during laser irradiation is so short (nano- to milliseconds) that normal oxidation kinetics cannot account for the amount of SiO2 measured. Irradiations in vacuum and in a helium ambient showed that the oxygen responsible for these effects is supplied from the ambient in which irradiations are carried out. Also no oxidation was observed when structures, prepared on a substrate heated to 350°C, were irradiated in atmosphere. A model to account for these oxidation effects is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 191
Copyright
Copyright © Materials Research Society 1992

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References

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