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Oxidation of Molybdenum Thin Films and its Impact on Molybdenum Field Emitter Arrays

Published online by Cambridge University Press:  17 March 2011

Babu R. Chalamala ,
Robert H. Reuss ,
Yi Wei ,
John M. Bernhard ,
Edward D. Sosa ,
David E. Golden ,
Sanjeev Aggarwal  and
R. Ramesh
Babu R. Chalamala
Affiliation:
Motorola, Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284
Robert H. Reuss
Affiliation:
Motorola, Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284
Yi Wei
Affiliation:
Motorola, Inc., Semiconductor Products Sector, 2100 E. Elliot Road, Tempe, AZ 85284
John M. Bernhard
Affiliation:
Department of Physics, University of North Texas, Denton, TX 75203
Edward D. Sosa
Affiliation:
Department of Physics, University of North Texas, Denton, TX 75203
David E. Golden
Affiliation:
Department of Physics, University of North Texas, Denton, TX 75203
Sanjeev Aggarwal
Affiliation:
Department of Material Science, University of Maryland, College Park, MD 20742
R. Ramesh
Affiliation:
Department of Material Science, University of Maryland, College Park, MD 20742
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Abstract

Oxidation of emitter surfaces can be a serious problem for Mo field emitter arrays. We studied the oxidation and related changes in the electronic properties of Mo thin films as a function of annealing temperature. Experiments were done on Mo thin films prepared on Si and sodalime glass substrates. These films were thermally oxidized and characterized using a variety of techniques including x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TPD) methods. For films oxidized below 400°C, partial oxidation was observed, with MoO3(110) being the principal oxide phase. However, at a temperature of 500°C and above, oxidation of the film was complete. Electrical characteristics of the films undergo a rapid transition from semiconductive to highly insulating at temperatures between 475 to 500°C. Temperature programmed desorption spectra showed that the oxides are stable at elevated temperature with only a principal O2 desorption peak at approximately 786°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D14.2.1
Copyright
Copyright © Materials Research Society 2001

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