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Oxidation of NiSi and Ni(Pt)Si: Molecular vs. Atomic Oxygen

Published online by Cambridge University Press:  01 February 2011

Sudha Manandhar ,
Brian Copp ,
Chiranjeevi Vamala  and
Jeffry Kelber
Sudha Manandhar
Affiliation:
sm0283@unt.edu, University of North Texas, Department of Chemistry, Denton, TX, 76203, United States
Brian Copp
Affiliation:
blc0109@unt.edu, University of North Texas, Department of Materials Science and Engineering, Denton, TX, 76201, United States
Chiranjeevi Vamala
Affiliation:
cv0050@unt.edu, University of North Texas, Department of Materials Science and Engineering, Denton, TX, 76201, United States
Jeffry Kelber
Affiliation:
kelber@unt.edu, University of North Texas, Department of Chemistry, Denton, TX, 76203, United States
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Abstract

X-ray photoelectron spectroscopy (XPS) has been used to characterize the reactivities of clean, stoichiometric NiSi and Ni(Pt)Si films on n-doped Si(100) substrates in O2, and in O+O2 environments. In the presence of O+O2, NiSi and Ni(Pt)Si form Ni silicate and Pt silicate overlayers, respectively, with oxide/silicate overlayer thicknesses of 41(4) Å (NiSi) and 28(3) Å (Ni(Pt)Si) after 4.5x104 L exposure. Exposure to O2 yields, for each material, a ∼7(1) Å thick SiO2 overlayer without transition metal oxidation. O+O2 induces rapid Si oxidation, formation of metal-rich silicides, and then the kinetically-driven oxidation of Ni or Pt to form a silicate. This may pose significant processing problems in silicate removal and unwanted Ni diffusion into other areas of the device.

Keywords

x-ray photoelectron spectroscopy (XPS)surface chemistryoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I03-04
Copyright
Copyright © Materials Research Society 2008

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