Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-28T21:09:16.758Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxidation state of tungsten oxide thin films used as gate dielectric for zinc oxide based transistors

Published online by Cambridge University Press:  18 December 2012

Michael Lorenz ,
Marius Grundmann ,
Sandra Wickert  and
Reinhard Denecke
Michael Lorenz
Affiliation:
Institut für experimentelle Physik II, Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstrasse 5, 04103 Leipzig, Germany
Marius Grundmann
Affiliation:
Institut für experimentelle Physik II, Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstrasse 5, 04103 Leipzig, Germany
Sandra Wickert
Affiliation:
Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Fakultät für Chemie und Mineralogie, Universität Leipzig, Linnéstrasse 2, 04103 Leipzig, Germany
Reinhard Denecke
Affiliation:
Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Fakultät für Chemie und Mineralogie, Universität Leipzig, Linnéstrasse 2, 04103 Leipzig, Germany
Get access

Abstract

We present an investigation of the degree of oxidization of tungsten oxide (WOx) thin films used as gate dielectric for metal-insulator-semiconductor field-effect transistors (MISFET). By means of X-ray photoelectron spectroscopy WOx thin films grown by pulsed-laser deposition at room temperature were investigated. The electrical and optical properties depend significantly on the oxygen pressure during deposition and are affected by the stoichiometric ratio of oxygen and tungsten.

Keywords

x-ray photoelectron spectroscopy (XPS)devicesinsulator
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 111 - 114
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lorenz, M., von Wenckstern, H. and Grundmann, M., Adv. Mater. 23, 5383 (2011).CrossRefGoogle Scholar
Lorenz, M., Reinhardt, A., von Wenckstern, H. and Grundmann, M., Appl. Phys. Lett. 101, 183502 (2012)CrossRefGoogle Scholar
Meyer, J., Hamwi, S., Kröger, M., Kowalsky, W., Riedl, T. and Kahn, A., Adv. Mater. 24, 5408 (2012)CrossRefGoogle Scholar
Granqvist, C.G., Azens, A., Hjelm, A., Kullman, L., Niklasson, G.A., Rönnow, D., Strømme Mattson, M., Veszelei, M. and Vaivars, G., Sol. Energy 63, 199 (1998)CrossRefGoogle Scholar
Stolze, M., Camin, B., Galbert, F., Reinholz, R. and Thomas, L., Thin Solid Films 409, 254 (2002)CrossRefGoogle Scholar
Lee, S.-H., Cheong, H., Tracy, C., Mascarenhas, A., Czanderna, A. and Deb, S., Appl. Phys. Lett. 75, 154 (1999)Google Scholar
Moulzolf, S.C., Ding, S.-a. and Lad, R.J., Sensor Actuat B-chem 77, 375 (2001)CrossRefGoogle Scholar
Penner, S., Liu, X., Klötzer, B., Klauser, F., Jenewein, B. and Bertel, E., Thin Solid Films 516, 2829 (2008)CrossRefGoogle Scholar