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Oxygen Doping of GaAs During Omvpe Controlled Introduction of Impurity Complexes

Published online by Cambridge University Press:  22 February 2011

Y. Park ,
M. Skowronski ,
T.S. Rosseel  and
M.O. Manasreh
Y. Park
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh PA 15213
M. Skowronski
Affiliation:
Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh PA 15213
T.S. Rosseel
Affiliation:
Oak Ridge National Laboratory, Oak Ridge TN 37831
M.O. Manasreh
Affiliation:
Wright Laboratory, WL/ELRA, WPAFB OH 45433
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Abstract

GaAs epilayers have been grown by Organo-Metallic Vapor Phase Epitaxy using dimethylaluminum methoxide as a dopant source. This compound contains a strong aluminumoxygen bond which is thought to remain intact during low temperature deposition and result in the incorporation of Al-O as a complex. Incorporation of aluminum and oxygen was investigated by Secondary Ion Mass Spectroscopy as a function of growth conditions: growth temperature, growth rate, V/III ratio, reactor pressure and dopant mole fraction. High doping levels up to 1020 cm−3 (for both oxygen and aluminum) were achieved without degradation of surface morphology andlor precipitation of a second phase. Oxygen concentration is lower than that of aluminum for all investigated growth conditions but at low deposition temperatures oxygen/aluminum ratios approach 1, indicating that Al-O is incorporated as a pair. Infrared absorption measurements in the 600-1200 cm−1 range did not detect well known isolated oxygen localized vibrational modes (LVM). Also in layers grown at low temperatures the intensity of isolated aluminum LVM at 362 cm−1 is much smaller than the concentration obtained by SIMS. Both observations prove that oxygen not only is incorporated as an Al-O pair but remains bonded in the bulk of the layer. Low temperature photoluminescence measurements indicate that the A1-O complex is electrically active in GaAs, forms a deep level within the GaAs band gap, and serves as an efficient non-radiative recombination center. Near band edge luminescence intensity correlates well incorporation of oxygen. The Al-O pairs act as deep acceptors in GaAs and cause the compensation of shallow tellurium donors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 293
Copyright
Copyright © Materials Research Society 1994

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