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Oxygen-Enhanced 1.54μm Photoluminescence of Er+3 in Silicon

Published online by Cambridge University Press:  25 February 2011

F. Arnaud D'avltaya ,
Y. Campidelli ,
J.A. Chroboczek ,
P.N. Favennec ,
H. L'haridon ,
D. Moutonnet  and
A. Wasiela
F. Arnaud D'avltaya
Affiliation:
Centre National d'Etudes des Télécommunications, 38243 Meylan, France
Y. Campidelli
Affiliation:
Centre National d'Etudes des Télécommunications, 38243 Meylan, France
J.A. Chroboczek
Affiliation:
Centre National d'Etudes des Télécommunications, 38243 Meylan, France
P.N. Favennec
Affiliation:
Centre National d'Etudes des Té1écommunications, 22301 Lannion, France
H. L'haridon
Affiliation:
Centre National d'Etudes des Té1écommunications, 22301 Lannion, France
D. Moutonnet
Affiliation:
Centre National d'Etudes des Té1écommunications, 22301 Lannion, France
A. Wasiela
Affiliation:
Laboratoire de Spectrométrie Physique, Université Joseph Fourier, 38402 St. Martin d'Hères, France
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Abstract

Favennec et al. (Jap. J. Appl. Phys. 29, L524, 1990) reported that the 1.54μm photoluminescence of Si implanted with Er+3 is activated by oxygen impurities. We observe a significant enhancement in the luminescence in Er-doped silicon epitaxial layers MBE-grown with intentional oxygen contamination. The PL is shown to be a bulk property of the material as it persisted after a partial layer removal by wet etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 425
Copyright
Copyright © Materials Research Society 1993

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References

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