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Oxygen-Nitrogen Interactions in Ion-Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

H. J. Stein
H. J. Stein*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Interaction of oxygen and nitrogen in ion-implanted crystalline silicon layers has been investigated by infrared absorption. Infrared absorption bands which are not produced by either 14N or 160 alone are observed after sequential implantation of 14N and 160 into overlapping profiles followed by annealing at 500°C. The new bands indicate oxygen - nitrogen interactions and are ascribed to Si-N vibrational modes with oxygen in nearby interstitial sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 287
Copyright
Copyright © Materials Research Society 1985

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