Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-28T14:11:48.676Z Has data issue: false hasContentIssue false
  • English
  • Français

Parameters Affecting the Process Window for Laser Planarization of Aluminum.

Published online by Cambridge University Press:  25 February 2011

Ivo J Raaijmakers ,
Harren Chu ,
Edith Ong ,
Shi-Qing Wang  and
Ken Ritz
Ivo J Raaijmakers
Affiliation:
Philips R&D center, Philips Components - Signetics, Sunnyvale, CA94088–3409
Harren Chu
Affiliation:
XMR Inc., 5403 Betsy Ross Dr., Santa Clara, CA95054.
Edith Ong
Affiliation:
XMR Inc., 5403 Betsy Ross Dr., Santa Clara, CA95054.
Shi-Qing Wang
Affiliation:
Philips R&D center, Philips Components - Signetics, Sunnyvale, CA94088–3409
Ken Ritz
Affiliation:
Philips R&D center, Philips Components - Signetics, Sunnyvale, CA94088–3409
Get access

Abstract

Irradiation with excimer laser pulses is demonstrated as a technique to fill contact/via holes for integrated circuits with Al-(1 wt.%)Cu. We discussed the influence of the size, shape and aspect ratio of the contact hole, and the metal thickness on the process (attitude for laser planarization. The most dominant parameters found to influence the planariza-tion process are the shape of the contact, and the shape of the as-deposited metal surface (“step coverage”). The application of a Cu anti-reflection coating increased the process window substantially. Although a planar Al-Cu surface was easily formed with laser irradiation, void free filling of contact holes was a more demanding task. Conditions for which completely filled contacts can be obtained were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 553
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tuckerman, D.B. and Weisberg, A.H., IEEE Electron Dev. Lett. EDL–7, 1 (1986).CrossRefGoogle Scholar
[2] Wang, S.Q., and Ong, E., to be published in Proc. 7th Int. IEEE VLSI Multilevel Interconnection Conf., Santa Clara, CA (1990).Google Scholar
[3] Baseman, R.J., J. Vac. Sci. Technol. B–8, 84 (1990).CrossRefGoogle Scholar
[4] Liu, R., Cheung, K.P., Lai, W.Y.-C., and Heim, R., Proc. 6 th Int. IEEE VLSI Multilevel Interconnection Conf., p. 329, Santa Clara, CA (1989).Google Scholar
[5] Chen, S., and Ong, E., Proc. of the SPIE 1190, “Laser/Optical Proccessing of Electronic Materials”, p. 207, (1989).Google Scholar
[6] Mukai, R., Sasaki, N., and Nakano, M., Mat. Res. Soc. Symp. Proc. 74, 229 (1987).CrossRefGoogle Scholar
[7] Woratschek, B., Carey, P., Stolz, M., and Bachmann, F., Proc. 6 th Int. IEEE VLSI Multilevel Interconnection Conf., p. 309, Santa Clara, CA (1989).Google Scholar
[8] Pramanik, D., and Chen, S., Proc. of the Int. Electron. Dev. Meeting, p.673 (1989).Google Scholar
[9] Broadbent, E.K., Ritz, K.N., Maillot, P., and Ong, E., Proc. 6 th Int. IEEE VLSI Multilevel Interconnection Conf., p. 336, Santa Clara, CA (1989).Google Scholar
[10] Baseman, R., Andreshak, J., Gupta, A., and Ting, C.-Y, in “Selected Topics in Electronic Materials”, ed. by Appleton, B.R., and Biegelsen, D.K., EA 18, 259 (Materials Research Society, Pittsburgh 1989).Google Scholar
[11] Baseman, R., and Andreshak, J., to be published in Mat. Res. Soc. Symp. Proc. 158 (1990).Google Scholar
[12] Raaijmakers, I.J.M.M., Setalvad, T., Bhansali, A.S., Burrow, B.J., Gutai, L., and Kim, K.-B., submitted for publication in J. Electron. Mater. (1989).Google Scholar
[13] Mukai, R., Kobayashi, K., and Nakano, M., Proc. 5 th Int. IEEE VLSI Multilevel Interconnection Conf., p. 101, Santa Clara, CA (1988).Google Scholar
[14] Marella, P.F., Tuckerman, D.B., and Pease, R.F.W., submitted for publication in Appl. Phys. Lett. (1990).Google Scholar