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Particle - Induced and Photo - Conductivities in Amorphous Si:H Under Proton Irradiation

Published online by Cambridge University Press:  15 February 2011

N. Kishimoto ,
H. Amekura ,
K. Kono  and
T. Saito
N. Kishimoto
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
H. Amekura
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
K. Kono
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
T. Saito
Affiliation:
National Research Institute for Metals 1-2- 1 Sengen, Tsukuba, Ibaraki 305, Japan, kishin@nrim.go.jp
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Abstract

Radiation damage of amorphous Si (a- Si) under 17 MeV- proton bombardment has been studied, measuring particle- induced conductivity(PIC) and photoconductivity(PC). The in- situ measurements have been conducted to focus on the structural flexibility and the metastable nature, inherent in the amorphous structure. While the PC (with weak illumination) has a fast response and reversible nature, the PIC has a long time- constant ∼60 s, followed by a persistent conductivity for more than ∼103 s. Both the PIC and the PC remain fairly stable against further irradiation, comparing to crystalline Si (c-Si), but they decay in the higher fluence region. A large part of the decayed PC recovers after annealing at 450 K. The results of a- Si are compared with those of c- Si. It is suggested that, in the lower fluence region, a-Si is more resistant against proton irradiation than c- Si, relaxing the atomic displacements, and the excited conductivities gradually decay with accumulation of the dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 679
Copyright
Copyright © Materials Research Society 1997

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