Hostname: page-component-6bf8c574d5-rwnhh Total loading time: 0 Render date: 2025-02-22T16:51:22.144Z Has data issue: false hasContentIssue false
  • English
  • Français

Particle-Assisted Oriented Deposition of Diamond Thin Films

Published online by Cambridge University Press:  15 February 2011

Dong-Gu Lee  and
Rajiv K. Singh
Dong-Gu Lee
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
Rajiv K. Singh
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
Get access

Abstract

We have developed a method for <111> oriented diamond film synthesis using micron-sized diamond particles. Different size of diamond powders were electrophoretically seeded on silicon substrates using diamond suspensions in organic solvents (acetone, methanol, and ethanol). Diamond suspension in acetone was found to be the best for obtaining uniform diamond seeding by electrophoresis. The thickness of diamond seeded films was changed by varying the applied voltage to observe the effect on the orientation of diamond particles. Then diamond films were deposited by the hot filament chemical vapor deposition (HFCVD) process. A preferred orientation with <111> direction normal to the substrate was obtained for monolayer coatings. The surface morphology, crystal orientation, and quality of diamond films were investigated using scanning electron microscopy, x-ray diffractometry, and Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 365
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wild, C., Koidl, P., Müller-Serbert, W., Walcher, H., Kohl, R., Herres, N., Locher, R., Samlenski, R., and Brenn, R., DiamondRelat. Maier., 2, 158 (1993).Google Scholar
2.. Clausing, R. E., Heatherly, L., Horton, L. L., Specht, E. D., Begun, G. M., and Wang, Z. L., DiamondRelat. MaRer., 1, 411 (1992).Google Scholar
3. Maeda, H., Irie, M., Hino, T., Kusakabe, K., and Morooka, S., J. MaHer. Res., 10(1), 158 (1995).Google Scholar
4. Stoner, B. R. and Glass, J. T., Appl. Phys. Left., 60(6), 698 (1992).Google Scholar
5. Koizumi, S., Murakami, T., Inuzuka, T., and Suzuki, K., Appl. Phys. Lett., 57 (6), 563 (1990).Google Scholar
6. Valdes, J. L., Mitchel, J. W., Mucha, J. A., Seibles, L., and Huggins, H., J. Eletrochem. Soc. 138 (2), 635 (1991).Google Scholar
7. Chu, C. T. and Dunn, B., Appl. Phys. Lett., 55, 492 (1989).Google Scholar
8. Birks, J. B., in Progress in Dielectrics, Vol 1, edited by Birks, J. B. and Schulman, J. H. (John Wiley & Sons, New York, 1959), pp 273–312.Google Scholar
9. Michael, Seal, in Synthetic Diamond: Emerging CVD Science and Technology, edited by Spear, K. E. and Dismukes, J. P. (John Wiley & Sons, New York, 1994), pp. 524–525.Google Scholar