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Passivation of Carbon Doping in InGaAs During ECR-CVD of SiNx

Published online by Cambridge University Press:  10 February 2011

F. Ren ,
R. A. Hamm ,
R. G. Wilson ,
S. J. Pearton  and
J. R. Lothian
F. Ren
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA
R. A. Hamm
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265, USA
S. J. Pearton
Affiliation:
University of Florida, Gainesville, FL 32611, USA
J. R. Lothian
Affiliation:
Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA
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Abstract

InGaAs (C) grown by gas-source MBE is found to contain significant concentrations 5 × 1018 cm−3 of hydrogen that is incorporated from the source gases. Subsequent deposition of ECR-CVD SiNx films as surface encapsulation produces additional hydrogen incorporation from the SiD4/N2 precursors, but actually reactivates C acceptors that were passivated in the asgrown InGaAs. Further thermal treatments produce substantial hydrogen in-diffusion from the SiNx film into the InGaAs, causing changes in sheet resistance and contact resistance. These processes simulate several steps in the formation of the base mesa of an InGaAs-based heterojunction bipolar transistor, and show how subtle changes in the temperature of these processes can affect subsequently device performance and apparent reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 321
Copyright
Copyright © Materials Research Society 1996

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References

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