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Patch antennas utilizing semi-insulating SiC for monolithic integration of the antenna subsystem on a SiC chip

Published online by Cambridge University Press:  18 June 2014

Tutku Karacolak ,
Rooban V. K. G. Thirumalai ,
Erdem Topsakal  and
Yaroslav Koshka
Tutku Karacolak
Affiliation:
Electrical Engineering, School of Engineering and Computer Science, Washington State University Vancouver, 14204 NE Salmon Creek Ave., Vancouver, WA 98686.
Rooban V. K. G. Thirumalai
Affiliation:
Department of Electrical and Computer Engineering, Mississippi State University, 406 Hardy Road, Mississippi State, MS 39762
Erdem Topsakal
Affiliation:
Department of Electrical and Computer Engineering, Mississippi State University, 406 Hardy Road, Mississippi State, MS 39762
Yaroslav Koshka
Affiliation:
Department of Electrical and Computer Engineering, Mississippi State University, 406 Hardy Road, Mississippi State, MS 39762
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Abstract

Semi-insulating (SI) silicon carbide (SiC) was evaluated as a candidate material for dielectric substrate for patch antennas suitable for monolithic antenna integration on a SiC semiconductor chip. Computer simulations of the return loss were conducted to design microstrip patch antennas operating at 10 GHz. The antennas were fabricated using SI 4H-SiC substrates, with Ti-Pt-Au stacks for ground planes and patches. A good agreement between the experimental results and simulation was obtained. The radiation performance of the designed SiC based patch antennas was as good as that normally achieved from antennas fabricated using conventional RF materials such as FR4 and Rogers. The antennas had the gain around 2 dBi at 10 GHz, which is consistent with the conventional antennas of a similar size.

Keywords

semiconductinginsulatormicroelectronics
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide–Materials, Processing and Devices , 2014 , mrss14-1693-dd06-09
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Kirschman, R., High Temperature Electronics, Wiley-IEEE Press, 1998.CrossRefGoogle Scholar
Shields, V. B., “Applications of Silicon Carbide for High Temperature Electronics and Sensors,” NASA Jet Propulsion Laboratory, Tech Briefs, ISSN 0145–319X, March 1996.Google Scholar
Cooper, J. A. Jr., “Silicon Carbide Electronic Devices and Integrated Circuits for Extreme Environments,” IEEE Aerospace Conference Proceedings, vol. 4, pp. 2507–2514, 2004.Google Scholar
Karacolak, T., Thirumalai, R. V. K. G., Merrett, J. N., Koshka, Y., and Topsakal, E. “Silicon Carbide Antennas for Harsh Environments, ” IEEE Antennas and Wireless Propagation Letters, vol. 12, 2013, pp. 409–412, doi: 10.1109/LAWP.2013.2251599.CrossRefGoogle Scholar
Afroz, S., Thomas, S.W., Mumcu, G., Saddow, S.E., “Implantable SiC based RF antenna biosensor for continuous glucose monitoring,” Sensors, 2013 IEEE, pp.1–4 (2013.Google Scholar
Pozar, D. M., “Microstrip antennas,” Proceedings of the IEEE, vol. 80, no. 1, pp. 79–91, Jan. 1992.CrossRefGoogle Scholar
Yoon, C., Lee, W., Kim, W., Lee, H., and Park, H., “Compact Band-notched Ultra-wideband Printed Antenna Using Inverted L-slit,” Microwave and Optical Technology Letters, vol. 54, no. 1, pp. 143–144, Jan. 2012.CrossRefGoogle Scholar
Kiminami, K., Hirata, A., and Shiozawa, T., “Double-sided Printed Bow-tie Antenna for UWB Communications,” IEEE Antennas and Wireless Propagation Letters, vol. 3, pp. 152–153, 2004.CrossRefGoogle Scholar
Yoon, C., Kim, W., Kang, S., Lee, H., and Park, H., “Printed Monopole Antenna on a Thin Substrate for UWB Applications,” Microwave and Optical Technology Letters, vol. 53, no. 6, pp. 1262–1264, June 2011.CrossRefGoogle Scholar
Krishnan, B.. Kotamraju, S. P., Melnychuk, G., Das, H., Merrett, J. N., and Koshka, Y., “Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth,” Journal of Electronic Materials, vol. 39, no. 1, pp. 34–38, 2010.CrossRefGoogle Scholar
Koshka, Y., “Method for Epitaxial Growth of Silicon Carbide at Reduced Temperatures,” U.S. Patent 7404858, July 29, 2008.Google Scholar