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Patterned Crystal Growth of GaAs by Laser Assisted Atomic Layer Epitaxy

Published online by Cambridge University Press:  25 February 2011

Sohachi Iwai ,
Takashi Meguro ,
Yoshinobu Aoyagi  and
Susumu Namba
Sohachi Iwai
Affiliation:
The Institute of Physical and Chemical Research, Wako-shi, Saitama, 351-01, Japan
Takashi Meguro
Affiliation:
The Institute of Physical and Chemical Research, Wako-shi, Saitama, 351-01, Japan
Yoshinobu Aoyagi
Affiliation:
The Institute of Physical and Chemical Research, Wako-shi, Saitama, 351-01, Japan
Susumu Namba
Affiliation:
The Institute of Physical and Chemical Research, Wako-shi, Saitama, 351-01, Japan
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Abstract

Atomic layer epitaxy (ALE) of GaAs is achieved by metalorganic vapor phase epitaxy (MOVPE) under irradiation by Ar ion laser. The self-limiting mechanism for gallium deposition at one atomic layer on an arsenic atomic surface is realized by the site-selective decomposition of triethylgallium on the arsenic surface. A patterned growth of ALE is obtained by scanning a laser beam on a substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 171
Copyright
Copyright © Materials Research Society 1989

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References

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