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Pd2Si on Si(111) Growth Kinetics Studied by X-Ray Diffraction

Published online by Cambridge University Press:  26 February 2011

Betty Coulman  and
Haydn Chen
Betty Coulman
Affiliation:
Dept. of Metallurgy and Mining Engineering and the Materials Research Laboratory, University of Illinois at Urbana-Champgaign, IL 61801.
Haydn Chen
Affiliation:
Philips Research Laboratory Sunnyvale, Signetics Corp., Sunnyvale, CA 94088.
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Abstract

Results are presented for the kinetics of growth of Pd2Si interfacial layers obtained by an X-ray diffraction technique. Epitaxial Pd2Si films were grown on Si(111) substrates over a temperature range of 160–222°C. The parabolic rate law observed is in qualitative agreement with those reported by investigators using other techniques (RBS, AES, Electron Microprobe). There appear to be two kinetics regimes distinquished by diffusion paths with different activation energies (1.35±0.10 eV vs. 1.05± 0.10 eV). The presence of impurities and the detailed Pd 2Si microstructure will influence how the reacting species are transported through the lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 601
Copyright
Copyright © Materials Research Society 1985

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