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PECVD of Amorphous Silicon Carbide from Trimethylsilane

Published online by Cambridge University Press:  10 February 2011

J. T. Kelliher ,
M. Massuda ,
P. A. DiFonzo  and
T. R. Neal
J. T. Kelliher
Affiliation:
Microelectronics Research Lab, Columbia, MD, 21045
M. Massuda
Affiliation:
Microelectronics Research Lab, Columbia, MD, 21045
P. A. DiFonzo
Affiliation:
Microelectronics Research Lab, Columbia, MD, 21045
T. R. Neal
Affiliation:
Microelectronics Research Lab, Columbia, MD, 21045
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Abstract

Amorphous silicon carbide (SiC) was deposited by plasma enhanced chemical vapor deposition (PECVD) in an Applied Materials (AMT5000) tool from sources of trimethylsilane (3MS) and either argon or nitrogen. A deposition rate of ≈ 800 nm/min on a 150 mm silicon wafer was achieved at 350°C. Process conditions investigated were temperature (200–400°C), power (100–600W), pressure (2–8 torr), gas flow rates, and spacing. Various process condition regimes generated a high particle count that was eliminated by controlling parameters of pressure and spacing. Ellipsometry and n&k Analyzer techniques determined the index of refraction. The index of refraction was in agreement between both tools and range from 1.79–2.36 depending on the 3MS flow (25–100 seem) and carrier gas. A Prometrix FT500 with a fixed index of refraction measured 49 points of thickness determined the uniformity. The SiC films stoichiometric composition was measured by X-ray Photoelectron Spectroscopy (XPS). Small quantities of oxygen or nitrogen were found. Additional properties examined were crystallinity, stress, and pinhole density. Dielectric constant was measured by CV techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 159
Copyright
Copyright © Materials Research Society 1998

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References

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