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PE-CVD of F-Doped SiO2 Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane

Published online by Cambridge University Press:  15 February 2011

T. Shirafuji ,
M. Sawada ,
Y. Nakagami ,
Y. Hayashi  and
S. Nishino
T. Shirafuji
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
M. Sawada
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
Y. Nakagami
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
Y. Hayashi
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
S. Nishino
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-Ku, Kyoto 606 JAPAN, sirafuji@dj.kit.ac.jp
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Abstract

SiO2 films have been prepared from tetraisocyanatesilane (TICS, Si(NCO)4) by using a conventional capacitively coupled RF(13.56MHz) plasma-enhanced CVD method. The films show poor water resistivity, which originates in inclusion of NCO in the films. This has been improved by mixing O2 to the source gas. SiO:F films have been prepared by mixing SiF4. The film with F concentration of 6at.% has shown dielectric constant of 3.3, resistivity of 3.6×1015Ωcm at 1MV/cm and break-down electric field of 7.7MV/cm. Infrared spectrum of the film have contained no noticeable OH peak even after exposing to the air for 2 weeks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 443: Symposium H – Low-Dielectric Constant Materials II , 1996 , 137
Copyright
Copyright © Materials Research Society 1997

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