Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-22T16:50:08.852Z Has data issue: false hasContentIssue false
  • English
  • Français

Performance of Poly-Si Tfts with Double Gate Oxide Layers

Published online by Cambridge University Press:  10 February 2011

Byung-Hyuk Min ,
Cheol-Min Park ,
Jae-Hong Jun ,
Byung-Sung Bae  and
Min-Koo Han
Byung-Hyuk Min
Affiliation:
Department of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Cheol-Min Park
Affiliation:
Department of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Jae-Hong Jun
Affiliation:
Department of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Byung-Sung Bae
Affiliation:
Samsung Electronics Co., Kiheung, Yongln-Goon, KyungKi-Do, 449-900, Korea
Min-Koo Han
Affiliation:
Department of Electrical Engineering., Seoul National Univ., Seoul, 151-742, Korea
Get access

Abstract

We have fabricated a poly-Si TFT with double gate insulator composed of ECR oxide and APCVD oxide to improved the performance of poly-Si TFTs. The poly-Si TFT with double gate oxide exhibits the remarkable enhancement of the electrical parameters compared with the conventional poly-Si TFTs which has APCVD gate oxide, such as improvement of the subthreshold swing and the low threshold voltage. The proposed poly-Si TFT has a higher oxide breakdown electrical field and the device characteristics are not degraded significantly after an electrical stress. It is found that the ECR oxide plays a key role to improve the device performances and prevent the poly-Si TFTs from degradation due to the electrical stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 171
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mimura, , Suzuki, T., Konishi, N., Suzuki, T., and Miyata, K., IEEE Electron Device Letters, 9, 290 (1988)Google Scholar
2. Hatalis, K., Kung, J.-H., Kanicki, J., and Bright, A., Mater. Res. Symp. Proc., 182, 357 (1990)Google Scholar
3. Lustig, and Kanicki, J., J. Appl. Phys., 65, 3951 (1989)Google Scholar