Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-29T23:46:08.135Z Has data issue: false hasContentIssue false
  • English
  • Français

Perpendicular Magnetic Anisotropy and Magneto-Optical Properties of Sputtered Re-Tm(CoGd)/Pd Multilayered Films

Published online by Cambridge University Press:  10 February 2011

T. Yang ,
W. H. Soe ,
B. X. Liu  and
R. Yamamoto
T. Yang
Affiliation:
Institute of Industrial Science, the University of Tokyo, Roppongi 7–22–1, Tokyo 106, Japan
W. H. Soe
Affiliation:
Institute of Industrial Science, the University of Tokyo, Roppongi 7–22–1, Tokyo 106, Japan
B. X. Liu
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
R. Yamamoto
Affiliation:
Institute of Industrial Science, the University of Tokyo, Roppongi 7–22–1, Tokyo 106, Japan
Get access

Abstract

The magnetic properties of sputtered RE-TM(CoGd)/Pd multilayered films were studied. CoGd layers with high Gd concentration were amorphous. Reducing the Gd concentration, CoGd layers changed from amorphous to crystalline gradually. Like in the crystalline Co/Pd multilayered films, perpendicular magnetic anisotropy(PMA) was observed only for CoGd/Pd multilayered films with thin magnetic layer. It is interesting to note that critical magnetic layer thickness, below which the easy magnetization axis is perpendicular to the film plane, reaches 2.5nm for CoGd/Pd multilayered films with amorphous CoGd layers and is larger than that of Co/Pd multilayered films. Kerr rotation was found decreased with the adding of Gd.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 458: Symposium W – Interfacial Engineering for Optimized Properties , 1996 , 369
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chaudhari, P., Cuomo, J. J., and Gambina, R. J., Appl. Phys. Lett. 22, 337 (1973).Google Scholar
2. den Broeder, F. J. A., Donkersloot, H. C., Draasima, H. J. G., and de Jonge, W. J. M., J. Appl. Phys. 61, 4317 (1987).Google Scholar
3. Carcia, P. F., Meinhalt, A. D. and Suna, A., Appl. Phys. Lett. 47, 178 (1985).Google Scholar
4. Ochiai, Y., Hashimoto, S. and Aso, K., IEEE Trans. Magn. 25, 3755 (1989).Google Scholar
5. Daalderop, G.H.O., Kelly, P.J., and HSchuurmans, M.F., Phys. Rev. B42, 7270 (1990)Google Scholar
6. Taylor, R. C., McGuire, T. R., Coey, J. M. D. and Gangulee, A., J. Appl. Phys. 49, 2885 (1978)Google Scholar
7. Zeeper, W.b., Greidanus, F.J.M., Carcia, P.F. and Fincher, C.R., J. Appl. Phys. 65, 4971 (1989)Google Scholar