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Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties

Published online by Cambridge University Press:  01 February 2011

Ilya V. Karpov ,
David Kencke ,
Derchang Kau ,
Stephen Tang  and
Gianpalo Spadini
Ilya V. Karpov
Affiliation:
ilya.v.karpov@intel.com, Intel, Santa Clara, California, United States
David Kencke
Affiliation:
david.l.kencke@intel.com, Intel, Portland, Oregon, United States
Derchang Kau
Affiliation:
derchang.kau@intel.com, Intel, Santa Clara, California, United States
Stephen Tang
Affiliation:
Stephen.TANG@numonyx.com, Numonyx B.V., San Jose, California, United States
Gianpalo Spadini
Affiliation:
gianpaolo.spadini@intel.com, Intel, santa clara, California, United States
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Abstract

We present a novel scalable and stackable nonvolatile solid state memory. Each cell consists of a storage element, based on phase change memory (PCM) element, and an integrated selector, using an Ovonic threshold switch (OTS). The cell is implemented to enable a true cross-point array. The main device characteristics and behaviors, corresponding physical processes in different operation modes, and key material properties are discussed.

Keywords

memorydeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G14-01-H07-01
Copyright
Copyright © Materials Research Society 2010

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References

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