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Phase Transformation Kinetics of TiSi2

Published online by Cambridge University Press:  21 February 2011

R.R. Mann ,
L.L. Clevenger  and
Q.Q. Hong
R.R. Mann
Affiliation:
IBM Technology Products, Essex Junction, VT 05452
L.L. Clevenger
Affiliation:
IBM T.J.Watson Research Center, Yorktown Heights, NY 10598
Q.Q. Hong
Affiliation:
IBM T.J.Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The microstructure and kinetics of the polymorphic C49 to C54-TiSi2 phase transformation have been studied using samples prepared as in self-aligned silicide applications. For C49-TiSi2 thin films formed at temperatures of 600°C and 625°C on (100) single-crystal silicon substrates, the effective activation energy was 5.6 ± 0.3 and 5.7 ± 0.08 eV, respectively, for this phase transformation carried out in the temperature range of 600°C to 700°C. The transformation process was observed to occur by nucleation and growth of the orthorhombic face-centered (C54) phase from the as-formed orthorhombic base-centered (C49) phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 281
Copyright
Copyright © Materials Research Society 1993

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References

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