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Phase Transformation of Mo and W over Co OR Its Alloy in Contact with Si

Published online by Cambridge University Press:  21 February 2011

Fann-Mei Yang  and
Mao-Chieh Chen
Fann-Mei Yang
Affiliation:
Department of Electronics Engineering & the Institute of Electronics, National Chiao Tung University, 1001 University Rd., Hsinchu 300, Taiwan
Mao-Chieh Chen
Affiliation:
Department of Electronics Engineering & the Institute of Electronics, National Chiao Tung University, 1001 University Rd., Hsinchu 300, Taiwan
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Abstract

W or Mo directly deposited on Si cold substrate by electron-beam gun at a base pressure of 10-6 torr is not able to form silicide even annealed at 900 °C in either N2 or H2 ambient. We present an easy way that Mo and W silicides can be formed on the same depositing and annealing conditions with the help of an intervened layer of cobalt or its alloy. Investigation was made on various metallizations of Mo (or W)/Co/Si, W/Co-Mo/Si, and Co/Mo/Si in normal flowingnitrogen or in H2 ambient at various temperatures. In the systems of Mo (or W)/Co/Si and W/Co-Mo/Si, the overlying Mo (or W) can be transformed into silicide at 900 °C, while in the Co/Mo/Si system, where stable Co-Mo compounds are formed in advance, no silicide can be formed. Why silicide is formed in preference to metal oxide in N2 environment at higher temperature is based on Ellingham diagram.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 329
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Scott, D. B., Hunter, W. R., and Shichijo, H., IEEE Trans. Electron Devices ED–29 (1982) 651.Google Scholar
2 Oertel, B. and Sperling, R., Thin Solid Films 37 (1976) 185.Google Scholar
3 Yanagisawa, S. and Fukuyama, T., J. Electrochem. Soc. 127 (1980) 1150.Google Scholar
4 Guivarc'h, A., Auvray, P., Berthou, L., LeCun, M., Boulet, J. P., Henoc, P., Pelous, G., and Martinez, A., J. Appl. Phys. 49 (1978) 233.Google Scholar
5 Baglin, J., Dempsey, J., Hammer, W., d'Heurle, F, Petersson, S., and Serrano, C., J. Electron. Mater. 8, 641 (1979).Google Scholar
6 Yang, F.-M. and Chen, M.-C., J. Vac. Sci. Technol. B 9, 1497 (1991).Google Scholar
7 Lou, Y. S. (private communication).Google Scholar
8 Pretorius, R., Harris, J. M., and Nicolet, M-A., Solid State Electron. 21 (1978) 667.CrossRefGoogle Scholar
9 Gaskell, D. R., Introduction to Metallurgical Thermodynamics, 2nd ed. (Hemisphere, Washinton, 1981), P 272.Google Scholar
10 Yang, F.-M. and Chen, M.-C., Thin Solid Films 207 (1992) 75.Google Scholar