Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-10T08:29:44.396Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Transformation of Titanium Disilicide Induced by High-Temperature Sputtering

Published online by Cambridge University Press:  15 February 2011

K. Fujii ,
R. T. Tung ,
D. J. Eaglesham ,
K. Kikuta  and
T. Kikkawa
K. Fujii
Affiliation:
NEC Corporation, ULSI Device Development Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, U.S.A.
D. J. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, U.S.A.
K. Kikuta
Affiliation:
NEC Corporation, ULSI Device Development Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
T. Kikkawa
Affiliation:
NEC Corporation, ULSI Device Development Laboratories, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
Get access

Abstract

The reaction between sputtered Ti thin films and heavily arsenic doped Si(100) is studied. The use of an arsenic implantation to pre-amorphize the Si substrate and the choice of the substrate temperature during Ti sputtering are both found to have a significant effect on subsequent TiSi2 reactions. Cross-sectional transmission electron microscopy reveals that an amorphous TiSix layer is formed at the interface between Si and as-sputtered Ti. The thickness of this interfacial layer increases with the sputtering temperature. After rapid thermal anneals in nitrogen, the sheet resistances of TiSi2 thin films grown with the pre-amorphization step and a high sputtering temperature (450°C) are generally lower than films processed under other conditions. This apparent reduction in the temperature for the polymorphic C49 to 54 phase transformation in TiSi2 is shown to originate from a higher nucleation density of the C54-TiSi2 phase. These dependencies of the silicide reaction are ascribed to the interfacial amorphous TiSix layer. In increasing the nucleation density of the C54-TiSi2 phase, the amorphous TiSix layer is speculated to either act as a direct nucleation source for the C54-TiSi2 phase, or lead to more defective C49-TiSi2 structures which facilitate the C54-TiSi2 nucleation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 83
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[I ] Beyers, R. and Sinclair, R., J.Appl.Phys. 57, 5240 (1985)Google Scholar
[2] Lasky, J.B., Nakos, J.S., Cain, O.J., and Geiss, P.J., IEEE Trans. Electron Devices 38, 262 (1991)Google Scholar
[3] Jeon, H., Sukow, C.A., Honeycutt, J.W., Rozgonyi, G.A., and Nemanich, R.J., J.Appl.Phys. 71, 4269 (1992)Google Scholar
[4] Fujii, K., Kikuta, K., and Kikkawa, T., VLSI Symp.Dig. 57 (1995)Google Scholar
[5] Holloway, K. and Sinclair, R., J.Appl.Phys. 61, 1359 (1987)Google Scholar
[6] Ma, Z., Ramanath, G., and Allen, A.H., Mat.Res.Soc.Pro. 320, 361 (1994)Google Scholar