Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-28T20:39:38.473Z Has data issue: false hasContentIssue false
  • English
  • Français

Phase Transition Behaviors of AgInSbTe-SiO2 Nanocomposite Thin Films for Phase-change Memory Applications

Published online by Cambridge University Press:  01 February 2011

Yu-Jen Huang ,
Tzu-Chin Chung ,
Chiung-Hsin Wang  and
Tsung-Eong Hsieh
Yu-Jen Huang
Affiliation:
n9118821@yahoo.com.twn9118821@gmail.com
Tzu-Chin Chung
Affiliation:
iso2007@yaoo.com.tw, National Chiao Tung University, Materials Science and Engineering, Hsinchu, Taiwan, Province of China
Chiung-Hsin Wang
Affiliation:
baziowang@gmail.com, National Chiao Tung University, Materials Science and Engineering, Hsinchu, Taiwan, Province of China
Tsung-Eong Hsieh
Affiliation:
tehsieh@mail.nctu.edu.twtehsieh@cc.nctu.edu.tw, National Chiao Tung University, Materials Science and Engineering, Hsinchu, Taiwan, Province of China
Get access

Abstract

Phase-change kinetics, structure evolution and feasibility to phase-change memory (PCM) of Ag2In7Sb64Te27 (AIST) and its nanocomposite comprised of 85 wt.% AIST and 15 wt.% SiO2 were presented. In-situ heating x-ray diffraction (XRD) indicated nanocomposite transforms from amorphous to HCP structure during heating and incorporation of SiO2 increases the recrystallization temperature (Tx) of samples (189°C for AIST and 223°C for nanocomposite). XRD and transmission electron microscopy (TEM) analyses both revealed the grain refinement in nanocomposite. Kissinger's analysis found the increase of activation energy (Ea) of phase transition in nanocomposite, denoting the SiO2 embedment restrains the grain growth of AIST during recrystallization. Johnson-Mehl-Avrami (JMA) theory revealed the decrease of Avrami exponent (n), indicating that the phase transition is prone to be heterogeneous since the dispersed SiO2 particles may provide additional nucleation sites.

Static I–V measurement indicated that the switching threshold voltage (Vth) of nanocomposite device (1.65 V) is higher than that of the AIST device (1.10 V). Increase of dynamic resistance in nanocomposite device leads to the reduction of writing current. I–V analysis also confirmed the retardation of recrystallization in AIST due to the incorporation of SiO2 and the rise of Ea is able to enhance the thermal stability of amorphous state in PCM devices.

Keywords

memoryelectrical propertiesphase transformation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1251: Symposium H – Phase-Change Materials for Memory and Reconfigurable Electronics Applications , 2010 , 1251-H03-04
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pieterson, L. van, Lankhorst, M. H. R. Schijndel, M. van, Kuiper, A. E. T. and Roosen, J. H. J. J. Appl. Phys. 97, 083520 (2005).Google Scholar
2 Yamada, N. Matsunaga, T. European/Phase Change and Ovonics Symposium (E/PCOS), p. 7, Lugano, Switzerland (2003).Google Scholar
3 Shinotsuka, M. Onagi, N. and Harigaya, M. Jpn. J. Appl. Phys. Part 1 39, 976 (2000).Google Scholar
4 Mai, Hung-Chuan and Hsieh, Tsung-Eong, Jpn. J. Appl. Phys. 46, 5834 (2007); ibid. 47, 6029 (2008).Google Scholar
5 Huang, Yu-Jen, Chen, Yen-Chou, and Hsieh, Tsung-Eong, J. Appl. Phys. 106, 034916 (2009).Google Scholar
6 Kissinger, H.E. Anal. Chem. 29, 1702 (1957).Google Scholar
7 Avrami, M. J. Chem. Phys. 7, 1103 (1939); ibid. 8, 212 (1940); ibid. 9, 177 (1941).Google Scholar
8 Christian, J. W. The Theory of Transformations in Metals and Alloys, PART I, Equilibrium and General Kinetic Theory, 2nd ed., (Pergamon Press, 1975) p. 15; ibid. p. 525.Google Scholar
9 Rodríguez, C.R., Prokhorov, E. Trapaga, G. Sànchez, E.M., Landaverde, M.H. Kovalenko, Yu. and Hernàndez, J.G., J. Appl. Phys. 96, 1040 (2004).Google Scholar
10 Ruitenberg, G. Petford-Long, A.K., and Doole, R.C. J. Appl. Phys., 92, 3116 (2002).Google Scholar
11 Ryu, S.W. Oh, J.H. Choi, B.J. Hwang, S.Y. Hong, S.K. Hwang, C.S. and Kim, H.J. Electrochem. and Solid-State Lett., 9, G259 (2006).Google Scholar