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The Phase Transition of Bi-Pt Alloys at the Interface of Pt/SrBi2Ta2O9 and its Effect on Interface Roughness

Published online by Cambridge University Press:  10 February 2011

Dong Suk Shin ,
Ho Nyung Lee ,
Yong Tae Kim ,
Young K. Park  and
In-Hoon Choi
Dong Suk Shin
Affiliation:
Semiconductor Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea Materials Science Department, Korea University, 1, 5Ka, Anam-Dong, Sungbuk-Ku, Seoul, 136-701, Korea
Ho Nyung Lee
Affiliation:
Semiconductor Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
Yong Tae Kim
Affiliation:
Semiconductor Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea, ytkim@kistmail.kist.re.kr
Young K. Park
Affiliation:
Semiconductor Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
In-Hoon Choi
Affiliation:
Materials Science Department, Korea University, 1, 5Ka, Anam-Dong, Sungbuk-Ku, Seoul, 136-701, Korea
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Abstract

Pt/SrBi2Ta2O9(SBT)/CeO2/Si (MFIS) structures were investigated for observing the change of electrical properties and morphology of interface of Pt/SBT after post-annealing of Pt top electrodes. The morphology of Pt/SBT interface became smooth and Bi oxide was formed at the bottom of Pt top electrode after post-annealing Pt top electrode. In order to describe the origin of these changes, Bi-oxide/Pt/SiO2/Si structure was investigated with annealing temperatures about the reaction between Bi oxide and Pt. We can describe that the smooth interface of Pt/SBT and the consumption of metallic Bi, which the reason why electrical properties were drastically improved, is induced by the melting of Pt-Bi alloys and formation of Bi-oxide after post-annealing Pt top electrode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 173
Copyright
Copyright © Materials Research Society 1999

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References

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