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Photocreated Defects and Light-Induced ESR in a-Si:H and Related Alloy Films

Published online by Cambridge University Press:  10 February 2011

Tatsuo Shimizu ,
Rudolf Durny  and
Minoru Kumeda
Tatsuo Shimizu
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Rudolf Durny
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
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Abstract

Two major problems in the field of a-Si:H and related alloy films such as a-Sil-xNx:H are addressed in this contribution, namely, the photocreation of neutral Si dangling bonds and the origin of the components of the light-induced ESR (LESR). We have proposed a new model for the photocreation of neutral Si dangling bonds in a-Si:H based on the presence of floating bonds. The model can explain the metastabilization of the broken weak bonds without the movement of H atoms. The broad, the narrow, and the dangling bond components of the LESR signal have been attributed to holes captured at negatively charged floating bonds, electrons trapped at antibonding states of weak bonds and photoexcited carriers captured at charged dangling bonds, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 553
Copyright
Copyright © Materials Research Society 1996

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