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Photoelectron Spectroscopy Investigation of Interface Formation Between poly(2-methoxy-5-(2′-ethyl-hexyloxy)- 1,4-phenylene vinylene) and Aluminum

Published online by Cambridge University Press:  01 February 2011

K. Demirkan
Affiliation:
Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716
A. Mathew
Affiliation:
Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716
R. L. Opila
Affiliation:
Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716
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Abstract

Al was thermally evaporated onto the conjugated semiconductor polymer, poly(2-methoxy-5,2′- ethyl-hexyloxy-phenylene vinylene) (MEH-PPV) in successive steps. Interface formation and chemical interactions between the polymer and Al were investigated by X-ray Photoelectron Spectroscopy (XPS) and synchrotron source Ultraviolet Photoelectron Spectroscopy (UPS). XPS analyses (angle resolved and sputtering depth profile) proved the formation of an insulating aluminum oxide layer at the polymer metal interface. The C-O bonds in the polymer decreased as more Al was evaporated on the MEH-PPV. Also reaction between Al and the carbon backbone of the polymer leading to the creation of carbon-metal bonds was observed. UPS analysis suggested the possibility of Al reacting with the phenylene ring of the polymer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1 Burroughes, J. H., Bradley, D. D. C., Brown, A. R., Marks, R. N., Mackay, K., Friend, R. H., Bums, P. L., and Holmes, A. B., Nature 347, 539 (1990).Google Scholar
2 Salaneck, W. R. and Brédas, J. L., Adv. Mater. 8, 48 (1996).Google Scholar
3 Hsieh, B. R., Ettedgui, E., and Gao, Y., Synth. Met. 78, 269 (1996).Google Scholar
4 Nguyen, T. P. and Mansot, J. L., Thin Solid Films 283, 135 (1996).Google Scholar
5 Konstadinidis, K., Papadimitrakopoulos, F., Galvin, M., Opila, R.L., J.Appl.Phys. 77, 5642 (1995).Google Scholar
6 Atreya, M., Li, S., Kang, E.T., Neoh, K.G., Ma, Z.H. and Tan, K.L., J.Vac. Sci. Technol. A 17, 853 (1999).Google Scholar
7 Fredriksson, C., Lazzaroni, R., Bredas, J.L., Dannetun, P., Logdlund, M., Salaneck, W.R., Synthetic Metals 57, 4632 (1993).Google Scholar
8 Choong, V.E., Park, Y., Hsieh, B.R. and Gao, Y. J.Phys. D: Appl. Phys. 30,1421 (1997).Google Scholar
9 Logdlund, M. and Bredas, J.L, J.Chem. Phys. 101, 4357 (1994).Google Scholar