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Photoelectron Spectroscopy Measurements of the Valence Band Structures of C60 Thin Films on Single Crystal Silicon and Polycrystalline Copper

Published online by Cambridge University Press:  11 February 2011

B. Ha ,
J. H. Rhee ,
Y. Li ,
D. Singh  and
S. C. Sharma
B. Ha
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
J. H. Rhee
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
Y. Li
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
D. Singh
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
S. C. Sharma*
Affiliation:
Department of Physics, University of Texas at Arlington, Arlington, Texas 76019
*
*sharma@uta.edu
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Abstract

We have used photoelectron spectroscopy to study possible modifications in the electronic valence band structures of thin films of C60 due to their deposition on single crystal silicon and polycrystalline copper. The C60 thin films were deposited by thermal evaporation under high vacuum and further characterized by using Raman spectroscopy. We observe significant differences in the valence band structures of C60 thin films deposited on these substrates and attribute them to interactions at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 734: Symposia A/B – Defect-Mediated Phenomena in Ordered Polymers – Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers , 2002 , B9.29
Copyright
Copyright © Materials Research Society 2003

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References

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