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Photoinduced Structural Changes in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

K. Shimizu ,
T. Tabuchi ,
K. Hattori ,
H. Kida  and
H. Okamoto
K. Shimizu
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Osaka, Japan, shimizu@semi.ee.es.osaka-u.ac.jp
T. Tabuchi
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Osaka, Japan
K. Hattori
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Osaka, Japan
H. Kida
Affiliation:
Department of Material Science and Chemistry, Wakayama University, Wakayama, Japan
H. Okamoto
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Osaka, Japan
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Abstract

Polarized electroabsorption method has been used to study photo-induced structural changes in hydrogenated amorphous silicon. The field-modulated absorption signal consists of two components, one of which is the true polarization-dependent electroabsorption serving as an indicator of the structural disorder, and the other is the thermoabsorption resulted from the temperature modulation due to Joule heating. The thermoabsorption component has removed from the observed field-modulated absorption signal to make an accurate and reliable evaluation of structural disorder by phase-separation procedure. As a result, about 15-25 % of the observed signal arises from the thermoabsorption effect for the Tauc gap region. Nevertheless, any essential alteration is not needed for our previous PEA results. The internal stress as well as density have been measured to provide another evidences for the photo-induced structural change. It is found that amorphous silicon film expands and the density tends to decrease upon light-exposure, the temporal behaviors of which coincide with that of the PEA ratio factor indicating disorderness of the amorphous network structure. The results permit us to conclude that a large scaled change in the amorphous network structure occurs under light-exposure, which might proceed the light-induced creation of metastable dangling bond defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 735
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Staebler, D. L. and Wronski, C. R.: Appl. Phys. Lett., 31, 292 (1977).Google Scholar
2 Street, R.A., Zesch, J. and Thompthon, M. J.: Appl. Phys. Lett., 43, 672 (1982).Google Scholar
3 Fritzsche, H.: Solid State Commun., 94, 953 (1995) and references therein.Google Scholar
4 Fan, J. and Kakalios, J.: Phys. Rev., B47, 10903 (1993).Google Scholar
5 Masson, D. P., Ouhal, A. and Yelon, A.: J. Non-Cryst. Solids, 190, 151 (1995).Google Scholar
6 Okamoto, H., Hattori, K. and Hamakawa, Y.: J. Non-Cryst. Solids, 164–166, 445 (1993).Google Scholar
7 Tsutsumi, Y., Okamoto, H., Hattori, K. and Hamakawa, Y.: Philos. Mag., B69, 253 (1994).Google Scholar
8 Shimizu, K., Shiba, T., Tabuchi, T. and Okamoto, H.: Jpn. J. Appl. Phys., 36, 29 (1997).Google Scholar
9 Shimizu, K., Shiba, T., Tabuchi, T. and Okamoto, H.: Technical Digest of the International PVSEC-9, Miyazaki, Japan, 563 (1996).Google Scholar
10 Shimizu, K., Shiba, T., Tabuchi, T. and Okamoto, H. J. Non-cryst Solids, (1998) (to be published).Google Scholar
11 Weiser, G., Dersch, U. and Thomas, T.: Philos. Mag., B57, 721 (1988).Google Scholar
12 Stoney, G. C.: Proc. Roy. Soc. London, A32, P. 172 (1909).Google Scholar
13 Campbell, D. S.: Chap. 12 of Handbook of Thin Film Technology, edited by Maissel, L. I. and Glang, R.(McGraw-Hill, New York, 1970)Google Scholar
14 Harbison, J. P., Williams, A. J. and Lang, D. V.: J. Appl.Phys., 55, 946 (1984).Google Scholar
15 Fritzsche, H., Tanielian, M., Tsai, C. C. and Gaczi, P. J.: J. Appl.Phys., 50, 3366 (1979).Google Scholar
16 Tauc, J.: Chap. 4 of Amorphous and Liquid Semiconductors, edited by Tauc, J.(Plenum, New York, 1974), p.171 Google Scholar
17 Hattori, K., Mori, T., Okamoto, H. and Hamakawa, Y.: Phys. Rev. Lett., 60, 825 (1988).Google Scholar
18 Pantelides, S.T.: Phys. Rev. Lett., 57, 2979 (1986).Google Scholar
19 Branz, H. M.: Solid State Commun., 105, 387 (1998).Google Scholar
20 Biswas, R. and Pan, C.:Appl. Phys. Lett., 72, 371 (1998).Google Scholar