Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-18T23:06:17.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoluminescence from Porous Silicon Anodized with Monochromatic Light Illumination

Published online by Cambridge University Press:  15 February 2011

Takahiro Matsumoto ,
Yasuaki Masumoto ,
Go Arata  and
Hidenori Mimura
Takahiro Matsumoto
Affiliation:
Single Quantum Dot Project, EFLATO, Japan Science and Technology Corporation, 5–9–9 Tokodai, Tsukuba 300–26, Japan, tomato@sqdp.trc-net.co.jp
Yasuaki Masumoto
Affiliation:
Single Quantum Dot Project, EFLATO, Japan Science and Technology Corporation, 5–9–9 Tokodai, Tsukuba 300–26, Japan, tomato@sqdp.trc-net.co.jp
Go Arata
Affiliation:
Institute of Physics, University of Tsukuba, Ibaraki 305, Japan
Hidenori Mimura
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai 980–77, Japan
Get access

Abstract

The effect of monochromatic light during the anodization of porous silicon is investigated from the points of view of structural characterization and photoluminescence. A clear correlation is observed between the photoluminescence peak energy and the bandgap energy determined by the illuminating photon energy. The difference of these two energies is analyzed by a size-dependent Stokes shift.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 535
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]Canham, L.T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
[2]Lehmann, V., J. Electrochem. Soc. 140, 2836 (1993).Google Scholar
[3]Lehmann, V., Jobst, B., Muschik, T., Kux, A., and Petrova-Koch, V., Jpn. J. Appl. Phys. 32, 2095 (1993).Google Scholar
[4]Richter, H., Wang, Z.P., and Ley, L., Solid. State Commun. 39, 625 (1981).Google Scholar
[5]Campbell, I.H. and Fauchet, P.M., 58, 739 (1984).Google Scholar
[6]Kanemitsu, Y., Uto, H., Masumoto, Y., Futagi, T., Matsumoto, T., and Mimura, H., Phys. Rev. B 48, 2827 (1993).Google Scholar
[7]Sui, Z., Leong, P.P., Herman, I.P., Higashi, G.S., and Temkin, H., Appl. Phys. Lett. 60, 2086 (1992).Google Scholar
[8]Schuppler, S., Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.-H., Ross, F.M., Harris, T.D., Brown, W.L., Chabel, Y.J., Brus, L.E., and Citrin, P.H., Phys. Rev. Lett. 72, 2648 (1994).Google Scholar
[9]Matsumoto, T., Masumoto, Y., and Koshida, N., to be published.Google Scholar
[10]Schuppler, S., Friedman, S.L., Marcus, M.A., Adler, D.L., Xie, Y.-H., Ross, F.M., Harris, T.D., Brown, W.L., Brus, L.E., Brown, W.L., Chaban, E.E., Szajoski, P.F., Chrsistman, S.B., and Citrin, P.H., Phys. Rev. B 52, 4910 (1995).Google Scholar