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Photoluminescence in Nitrogen-Rich a-SiNx:H

Published online by Cambridge University Press:  21 February 2011

D. Chen ,
J.M. Viner ,
P.C. Taylor  and
J. Kanicki
D. Chen
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
J.M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
J. Kanicki
Affiliation:
Department of Physics, University of Utah, Salt Lake City UT 84112
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Abstract

We report the measurement of photoluminescence (PL) from nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6:H) films. Excitation at 4.8 eV gives a PL spectrum of approximately Gaussian lineshape centered at 2.9 eV with a full width at half maximum of 1.4 eV. The PL intensity at 2.9 eV fatigues under continuous 4.8 eV excitation, but may be restored by thermal annealing or photobleaching with light of energy ≥ 2 eV. For emission at 2.9 eV, the PL excitation spectrum in the range 3.0 to 5.2 eV follows the a-SiN1.6:H film optical absorption edge at low energy and then decreases with a maximum at approximately 5.4 eV. The PL results are discussed within the framework of a negative effective electron-electron correlation energy (negative Ueff) for the dominant defect (silicon atom bonded to three nitrogen atoms).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 661
Copyright
Copyright © Materials Research Society 1992

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References

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